IMECH-IR  > 非线性力学国家重点实验室
ABM光刻机/曝光机
黄先富
ClassificationABM/6/350/NUV/DCCD/BSV/M
2014-09-19
Abstract通过光学系统以投影方法将掩模版上的图形转移到涂有光刻胶的晶圆上,晶圆表面会留下带有微图形结构的薄膜。主要技术指标: 接触式曝光方式线条宽度为 0.6微米,间接式曝光方式线条宽度为 1.0微米,厚胶光刻特征尺寸为100-300微米,正面对准精度≤ ±1微米,背面对准精度≤ ±2微米。
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Identifierhttp://dspace.imech.ac.cn/handle/311007/79610
Collection非线性力学国家重点实验室
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GB/T 7714
黄先富. ABM光刻机/曝光机(ABM/6/350/NUV/DCCD/BSV/M), 2014.
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