| Molecular dynamics simulation of helium ion implantation into silicon and its migration |
| Liu L; Xu ZW; Li RR; Zhu R; Xu J; Zhao JL; Wang C(王超) ; Nordlund K; Fu X; Fang FZ
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| 通讯作者 | Xu, Zongwei(zongweixu@tju.edu.cn)
; Xu, Jun(xujun@pku.edu.cn)
|
| 发表期刊 | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| 2019-10-01
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| 卷号 | 456页码:53-59 |
| ISSN | 0168-583X
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| 摘要 | In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular dynamics (MD) simulation method to study the interaction mechanism of helium ion with monocrystalline Si and helium ion migration. In order to study the damage effect of helium ion implantation on monocrystalline Si, identify diamond structure (IDS), radial distribution function, temperature analysis were calculated and analyzed. The effects of ion doses, beam currents and energies on the damage were studied. Helium ion implanted Si with ion doses of 1 x 10(14)/cm(2) was subsequently heated to 300 K. MD simulation results indicated that IDS damage induced by ion implantation was positively correlated with ion doses as the ion implantation increased to 1 x 10(14)/cm(2). The mean-square displacement of helium atoms was calculated during the temperature rising to 300 K. It was found that the high permeability of helium atoms in Si and the acceleration of atomic thermal motion owing to elevated temperature as well as the existence of larger stress would be helpful to the migration of implant helium atoms. |
| 关键词 | Molecular dynamics simulation
Ion implantation
Helium
Si
Annealing
|
| DOI | 10.1016/j.nimb.2019.06.034
|
| 收录类别 | SCI
; EI
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| 语种 | 英语
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| WOS记录号 | WOS:000480669600011
|
| 关键词[WOS] | BUBBLE FORMATION
; HE-IMPLANTATION
; CAVITIES
; TEMPERATURE
; MECHANISMS
; EVOLUTION
; DEFECTS
; VOIDS
|
| WOS研究方向 | Instruments & Instrumentation
; Nuclear Science & Technology
; Physics
|
| WOS类目 | Instruments & Instrumentation
; Nuclear Science & Technology
; Physics, Atomic, Molecular & Chemical
; Physics, Nuclear
|
| 资助项目 | National Natural Science Foundation of China[51575389]
; National Natural Science Foundation of China[51511130074]
; National Natural Science Foundation of China[11327902]
; National Natural Science Foundation of China[11605001]
; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme[51761135106]
; Natural Science Foundation of Tianjin[15JCYBJC19400]
; State key laboratory of precision measuring technology and instruments[Pi1t1705]
; '111' project by the State Administration of Foreign Experts Affairs
; Ministry of Education of China[B07014]
|
| 项目资助者 | National Natural Science Foundation of China
; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme
; Natural Science Foundation of Tianjin
; State key laboratory of precision measuring technology and instruments
; '111' project by the State Administration of Foreign Experts Affairs
; Ministry of Education of China
|
| 论文分区 | Q3
|
| 力学所作者排名 | 5+
|
| RpAuthor | Xu, Zongwei
; Xu, Jun
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://dspace.imech.ac.cn/handle/311007/79745
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| 专题 | 非线性力学国家重点实验室
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推荐引用方式
GB/T 7714 |
Liu L,Xu ZW,Li RR,et al. Molecular dynamics simulation of helium ion implantation into silicon and its migration[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,456:53-59.
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| APA |
Liu L.,Xu ZW.,Li RR.,Zhu R.,Xu J.,...&Fang FZ.(2019).Molecular dynamics simulation of helium ion implantation into silicon and its migration.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,456,53-59.
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| MLA |
Liu L,et al."Molecular dynamics simulation of helium ion implantation into silicon and its migration".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 456(2019):53-59.
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