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Molecular dynamics simulation of helium ion implantation into silicon and its migration
Liu L; Xu ZW; Li RR; Zhu R; Xu J; Zhao JL; Wang C(王超); Nordlund K; Fu X; Fang FZ
Corresponding AuthorXu, Zongwei(zongweixu@tju.edu.cn) ; Xu, Jun(xujun@pku.edu.cn)
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
2019-10-01
Volume456Pages:53-59
ISSN0168-583X
AbstractIn this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular dynamics (MD) simulation method to study the interaction mechanism of helium ion with monocrystalline Si and helium ion migration. In order to study the damage effect of helium ion implantation on monocrystalline Si, identify diamond structure (IDS), radial distribution function, temperature analysis were calculated and analyzed. The effects of ion doses, beam currents and energies on the damage were studied. Helium ion implanted Si with ion doses of 1 x 10(14)/cm(2) was subsequently heated to 300 K. MD simulation results indicated that IDS damage induced by ion implantation was positively correlated with ion doses as the ion implantation increased to 1 x 10(14)/cm(2). The mean-square displacement of helium atoms was calculated during the temperature rising to 300 K. It was found that the high permeability of helium atoms in Si and the acceleration of atomic thermal motion owing to elevated temperature as well as the existence of larger stress would be helpful to the migration of implant helium atoms.
KeywordMolecular dynamics simulation Ion implantation Helium Si Annealing
DOI10.1016/j.nimb.2019.06.034
Indexed BySCI ; EI
Language英语
WOS IDWOS:000480669600011
WOS KeywordBUBBLE FORMATION ; HE-IMPLANTATION ; CAVITIES ; TEMPERATURE ; MECHANISMS ; EVOLUTION ; DEFECTS ; VOIDS
WOS Research AreaInstruments & Instrumentation ; Nuclear Science & Technology ; Physics
WOS SubjectInstruments & Instrumentation ; Nuclear Science & Technology ; Physics, Atomic, Molecular & Chemical ; Physics, Nuclear
Funding ProjectNational Natural Science Foundation of China[51575389] ; National Natural Science Foundation of China[51511130074] ; National Natural Science Foundation of China[11327902] ; National Natural Science Foundation of China[11605001] ; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme[51761135106] ; Natural Science Foundation of Tianjin[15JCYBJC19400] ; State key laboratory of precision measuring technology and instruments[Pi1t1705] ; '111' project by the State Administration of Foreign Experts Affairs ; Ministry of Education of China[B07014]
Funding OrganizationNational Natural Science Foundation of China ; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme ; Natural Science Foundation of Tianjin ; State key laboratory of precision measuring technology and instruments ; '111' project by the State Administration of Foreign Experts Affairs ; Ministry of Education of China
ClassificationQ3
Ranking5+
Citation statistics
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/79746
Collection非线性力学国家重点实验室
Recommended Citation
GB/T 7714
Liu L,Xu ZW,Li RR,et al. Molecular dynamics simulation of helium ion implantation into silicon and its migration[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,456:53-59.
APA Liu L.,Xu ZW.,Li RR.,Zhu R.,Xu J.,...&Fang FZ.(2019).Molecular dynamics simulation of helium ion implantation into silicon and its migration.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,456,53-59.
MLA Liu L,et al."Molecular dynamics simulation of helium ion implantation into silicon and its migration".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 456(2019):53-59.
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