IMECH-IR  > 非线性力学国家重点实验室
Study on copper protrusion of through-silicon via in a 3-D integrated circuit
Song M; Wei ZQ; Wang BY; Chen L; Chen L; Szpunar JA
Corresponding AuthorSong, Ming(songmingx@gmail.com)
Source PublicationMATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
2019-05-07
Volume755Pages:66-74
ISSN0921-5093
AbstractThe through-silicon via (TSV) approach is crucial for three-dimensional integrated circuit (3-D IC) packaging technology. However, there are still several challenges in the TSV fabrication process. One of the widely known challenges is via protrusion phenomenon. Annealing a TSV wafer makes the copper (Cu) TSVs under high stress and may form a protrusion where the Cu is extruded out of the TSV structure. The phenomenon occurs because of the large mismatch in the coefficient of thermal expansion between Cu via and silicon (Si) layer. Cu protrusion is able to cause crack, delamination of the back-end-of-line and short circuit of the chip, thus, it is a dangerous threat to the metal layer interconnect. Experiments are conducted to characterize the protrusion using several techniques. Scanning electron microscope is used to observe the protrusion topography and measure the height. Electron backscatter diffraction (EBSD) technique is implemented to study the grain size distribution, local texture and microstructure evolution inside Cu vias. For the experiment, arrays of 10 mu m diameter TSVs are fabricated and annealed in argon gas environment in six different temperatures. In this paper, finite element analysis (FEA) is carried out to study the Cu protrusion under different annealing conditions. Correlation between numerical results and experimental data is then performed. Based on the verified FEA methodology, several parametric studies are then conducted, including the effects of annealing temperature on Cu protrusion, residual stress distributions of TSV structures. The simulation results are helpful to understand and solve the key problem in TSV fabrication process and reliability challenge.
KeywordThrough-silicon via Cu protrusion Annealing temperature Electron backscatter diffraction Finite element analysis
DOI10.1016/j.msea.2019.03.130
Indexed BySCI ; EI
Language英语
WOS IDWOS:000467669000008
WOS KeywordBONDED COMPLIANT SEAL ; RESIDUAL-STRESSES ; DESIGN ; TSV ; RELIABILITY ; VIAS
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
Funding ProjectNational Natural Science Foundation of China[51805543] ; Natural Science Foundation of Shandong Province of China[ZR2017BEE037] ; Fundamental Research and Application Funds of Qingdao City[16-5-1-47-jch] ; Fundamental Research Funds for the Central Universities[15CX02112A] ; Fundamental Research Funds for the Central Universities[18CX05002A]
Funding OrganizationNational Natural Science Foundation of China ; Natural Science Foundation of Shandong Province of China ; Fundamental Research and Application Funds of Qingdao City ; Fundamental Research Funds for the Central Universities
Classification一类
Ranking3
ContributorSong, Ming
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/80699
Collection非线性力学国家重点实验室
Recommended Citation
GB/T 7714
Song M,Wei ZQ,Wang BY,et al. Study on copper protrusion of through-silicon via in a 3-D integrated circuit[J]. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,2019,755:66-74.
APA Song M,Wei ZQ,Wang BY,Chen L,Chen L,&Szpunar JA.(2019).Study on copper protrusion of through-silicon via in a 3-D integrated circuit.MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING,755,66-74.
MLA Song M,et al."Study on copper protrusion of through-silicon via in a 3-D integrated circuit".MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING 755(2019):66-74.
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