Simulations of dislocation density in silicon carbide crystals grown by the PVT-method

doi:10.1016/j.jcrysgro.2019.125380

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	Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
	Chen QS(陈启生)1,2,3 ; Zhu P(朱鹏)1,3; He M(何蒙)1,3
通讯作者	Chen, Qi-Sheng(qschen@imech.ac.cn)
发表期刊	JOURNAL OF CRYSTAL GROWTH
	2020-02-01
卷号	531 页码:6
ISSN	0022-0248
摘要	The Alexander-Haasen (AH) model has been applied to analyze the plastic deformation and dislocation generation during the crystal growth process of 4H-SiC (silicon carbide). Plastic parameters are obtained by fitting the predicted curves to the experimental data on the plastic deformation of alpha-SiC crystals under uniaxial compression. The relationship between the activity energy (Q) and stress exponent (n) is considered when using the AH model. This relationship explicitly represents two deformation mechanisms around the critical temperature. The ratio of the activity energy and stress exponent, Q/n, equals 0.3 eV when the temperature is below the transition temperature, and 1.3 eV when the temperature is above the transition temperature. Then, the model is used to predict the dislocation density and thermal stresses in the crystals. The largest dislocation density is found to occur near the graphite/SiC interface, and the dislocation density gradually decreases with the thickness of the ingot.
关键词	Computer simulation Defects Heat transfer Stresses Growth from vapor Semiconducting silicon compounds
DOI	10.1016/j.jcrysgro.2019.125380
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000504205900044
关键词[WOS]	SIC SINGLE-CRYSTALS ; PLASTIC BEHAVIOR ; ACTIVATION PARAMETERS ; NUMERICAL-SIMULATION ; SUBLIMATION GROWTH ; DYNAMICS ; GLIDE
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
资助项目	National Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015]
项目资助者	National Natural Science Foundation of China
论文分区	Q3
力学所作者排名	1
RpAuthor	Chen, Qi-Sheng
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/81253
专题	微重力重点实验室
作者单位	1.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 3.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Chen QS,Zhu P,He M. Simulations of dislocation density in silicon carbide crystals grown by the PVT-method[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:6.
APA	陈启生,朱鹏,&何蒙.(2020).Simulations of dislocation density in silicon carbide crystals grown by the PVT-method.JOURNAL OF CRYSTAL GROWTH,531,6.
MLA	陈启生,et al."Simulations of dislocation density in silicon carbide crystals grown by the PVT-method".JOURNAL OF CRYSTAL GROWTH 531(2020):6.

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