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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
Chen QS(陈启生)1,2,3; Zhu P(朱鹏)1,3; He M(何蒙)1,3
Corresponding AuthorChen, Qi-Sheng(qschen@imech.ac.cn)
Source PublicationJOURNAL OF CRYSTAL GROWTH
2020-02-01
Volume531Pages:6
ISSN0022-0248
AbstractThe Alexander-Haasen (AH) model has been applied to analyze the plastic deformation and dislocation generation during the crystal growth process of 4H-SiC (silicon carbide). Plastic parameters are obtained by fitting the predicted curves to the experimental data on the plastic deformation of alpha-SiC crystals under uniaxial compression. The relationship between the activity energy (Q) and stress exponent (n) is considered when using the AH model. This relationship explicitly represents two deformation mechanisms around the critical temperature. The ratio of the activity energy and stress exponent, Q/n, equals 0.3 eV when the temperature is below the transition temperature, and 1.3 eV when the temperature is above the transition temperature. Then, the model is used to predict the dislocation density and thermal stresses in the crystals. The largest dislocation density is found to occur near the graphite/SiC interface, and the dislocation density gradually decreases with the thickness of the ingot.
KeywordComputer simulation Defects Heat transfer Stresses Growth from vapor Semiconducting silicon compounds
DOI10.1016/j.jcrysgro.2019.125380
Indexed BySCI ; EI
Language英语
WOS IDWOS:000504205900044
WOS KeywordSIC SINGLE-CRYSTALS ; PLASTIC BEHAVIOR ; ACTIVATION PARAMETERS ; NUMERICAL-SIMULATION ; SUBLIMATION GROWTH ; DYNAMICS ; GLIDE
WOS Research AreaCrystallography ; Materials Science ; Physics
WOS SubjectCrystallography ; Materials Science, Multidisciplinary ; Physics, Applied
Funding ProjectNational Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015]
Funding OrganizationNational Natural Science Foundation of China
ClassificationQ3
Ranking1
ContributorChen, Qi-Sheng
Citation statistics
Document Type期刊论文
Identifierhttp://dspace.imech.ac.cn/handle/311007/81253
Collection国家微重力实验室
Affiliation1.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China;
2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;
3.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China
Recommended Citation
GB/T 7714
Chen QS,Zhu P,He M. Simulations of dislocation density in silicon carbide crystals grown by the PVT-method[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:6.
APA 陈启生,朱鹏,&何蒙.(2020).Simulations of dislocation density in silicon carbide crystals grown by the PVT-method.JOURNAL OF CRYSTAL GROWTH,531,6.
MLA 陈启生,et al."Simulations of dislocation density in silicon carbide crystals grown by the PVT-method".JOURNAL OF CRYSTAL GROWTH 531(2020):6.
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