Simulations of dislocation density in silicon carbide crystals grown by the PVT-method | |
Chen QS(陈启生)1,2,3; Zhu P(朱鹏)1,3; He M(何蒙)1,3 | |
通讯作者 | Chen, Qi-Sheng(qschen@imech.ac.cn) |
发表期刊 | JOURNAL OF CRYSTAL GROWTH |
2020-02-01 | |
卷号 | 531页码:6 |
ISSN | 0022-0248 |
摘要 | The Alexander-Haasen (AH) model has been applied to analyze the plastic deformation and dislocation generation during the crystal growth process of 4H-SiC (silicon carbide). Plastic parameters are obtained by fitting the predicted curves to the experimental data on the plastic deformation of alpha-SiC crystals under uniaxial compression. The relationship between the activity energy (Q) and stress exponent (n) is considered when using the AH model. This relationship explicitly represents two deformation mechanisms around the critical temperature. The ratio of the activity energy and stress exponent, Q/n, equals 0.3 eV when the temperature is below the transition temperature, and 1.3 eV when the temperature is above the transition temperature. Then, the model is used to predict the dislocation density and thermal stresses in the crystals. The largest dislocation density is found to occur near the graphite/SiC interface, and the dislocation density gradually decreases with the thickness of the ingot. |
关键词 | Computer simulation Defects Heat transfer Stresses Growth from vapor Semiconducting silicon compounds |
DOI | 10.1016/j.jcrysgro.2019.125380 |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000504205900044 |
关键词[WOS] | SIC SINGLE-CRYSTALS ; PLASTIC BEHAVIOR ; ACTIVATION PARAMETERS ; NUMERICAL-SIMULATION ; SUBLIMATION GROWTH ; DYNAMICS ; GLIDE |
WOS研究方向 | Crystallography ; Materials Science ; Physics |
WOS类目 | Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied |
资助项目 | National Natural Science Foundation of China[11772344] ; National Natural Science Foundation of China[11532015] |
项目资助者 | National Natural Science Foundation of China |
论文分区 | Q3 |
力学所作者排名 | 1 |
RpAuthor | Chen, Qi-Sheng |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://dspace.imech.ac.cn/handle/311007/81253 |
专题 | 微重力重点实验室 |
作者单位 | 1.Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 3.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Chen QS,Zhu P,He M. Simulations of dislocation density in silicon carbide crystals grown by the PVT-method[J]. JOURNAL OF CRYSTAL GROWTH,2020,531:6. |
APA | 陈启生,朱鹏,&何蒙.(2020).Simulations of dislocation density in silicon carbide crystals grown by the PVT-method.JOURNAL OF CRYSTAL GROWTH,531,6. |
MLA | 陈启生,et al."Simulations of dislocation density in silicon carbide crystals grown by the PVT-method".JOURNAL OF CRYSTAL GROWTH 531(2020):6. |
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