Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering

doi:10.1016/j.apsusc.2021.150417

IMECH-IR > 宽域飞行工程科学与应用中心

	Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering
	Xu Y(许亿); Li GD(李国栋); Li G(李光); Gao FY(高方圆); Xia Y(夏原)
通讯作者	Xia, Yuan(xia@imech.ac.cn)
发表期刊	APPLIED SURFACE SCIENCE
	2021-10-30
卷号	564 页码:10
ISSN	0169-4332
摘要	The purpose of this paper is to explore the effect of bias voltage on plasma discharge characteristics, element concentration, microstructure, morphology, and mechanical properties of super-hard (AlCrTiVZr)N high-entropy alloy nitride (HEAN) films synthesized by high power impulse magnetron sputtering (HiPIMS). Results show that all HiPIMS-deposited (AlCrTiVZr)N films and the DCMS reference sample present a single NaCl-type FCC structure. Compared with DCMS, HiPIMS can produce a higher ionization fraction of the HEA target elements, thereby improving the structure and mechanical properties, while reducing the deposition rate. With increasing bias voltage in HiPIMS, the ion bombardment is continuously enhanced due to the increasing flux and energy of ionized particles reaching the films. The altered plasma environment splits the growth of (AlCrTiVZr)N films into two regions: The bias voltages of 0 V to -150 V offer a moderate ion bombardment effect, while further increasing bias voltage up to -200 V makes the ion bombardment effect excessive. It is observed that the (AlCrTiVZr)N films deposited at -150 V have a compact and featureless structure with preferred orientation of (111), the smallest grain size of 11.3 nm, a high residual compressive stress of -1.67GPa, thereby exhibiting the highest hardness of 48.3 GPa which attains the super-hard grade.
关键词	High-entropy alloy nitride films HiPIMS Bias voltage Plasma discharge characteristics Microstructure Hardness
DOI	10.1016/j.apsusc.2021.150417
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000675534100003
关键词[WOS]	AL-N COATINGS ; MECHANICAL-PROPERTIES ; SUBSTRATE BIAS ; PULSED-DC ; TIN FILMS ; DEPOSITION ; FREQUENCY ; HIPIMS ; RATES
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
资助项目	National Nature Science Foundation of China[51871230] ; Young Scientists Fund[51701229] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB22040503]
项目资助者	National Nature Science Foundation of China ; Young Scientists Fund ; Strategic Priority Research Program of the Chinese Academy of Sciences
论文分区	一类
力学所作者排名	1
RpAuthor	Xia, Yuan
引用统计	被引频次：38[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/87079
专题	宽域飞行工程科学与应用中心
作者单位	1.Chinese Acad Sci, Inst Mech, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Xu Y,Li GD,Li G,et al. Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering[J]. APPLIED SURFACE SCIENCE,2021,564:10.
APA	许亿,李国栋,李光,高方圆,&夏原.(2021).Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering.APPLIED SURFACE SCIENCE,564,10.
MLA	许亿,et al."Effect of bias voltage on the growth of super-hard (AlCrTiVZr)N high-entropy alloy nitride films synthesized by high power impulse magnetron sputtering".APPLIED SURFACE SCIENCE 564(2021):10.

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