Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors

doi:10.1021/acsanm.2c00573

IMECH-IR > 非线性力学国家重点实验室

	Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors
	Wang JD(王俊刁)1,2; Ning HR 3; Wang J(王军)1 ; Kershaw SV 4,5; Jing LH 3; Xiao P(肖攀)1
通讯作者	Jing, Lihong(jinglh@iccas.ac.cn) ; Xiao, Pan(xiaopan@lnm.imech.ac.cn)
发表期刊	ACS APPLIED NANO MATERIALS
	2022-04-05
卷号	5 期号:4 页码:5617-5624
摘要	Semiconductor quantum dots (QDs) are promising materials for stress/strain sensing applications owing to their pressure-dependent photoluminescence (PL) and nanoscale size, while the impact of stress and microstructure on their optical properties still awaits in-depth investigations under more realistic loading conditions. Herein, bare CuInS2 QDs and core- shell structured CuInS2/ZnS QDs are investigated under repetitive pressure loadings to elucidate the pressure-dependent PL responses over many pressure cycles. The CuInS2/ZnS QDs not only show higher PL intensity but also exhibit a reliable and simple relationship between PL emission peak energy (E-PL) and external pressure (P), which is desirable for actual application in stress/strain sensing. Specifically, the E-PL-P relationship of bare CuInS2 QDs changes after the first loading-unloading cycle, while the EPL-P relationship of CuInS2/ZnS QDs shows repeatable trajectories under different cycles. This research provides experimental support for designing QD-based stress/ strain sensing materials and explains how the shell and surface microstructure will affect the mechanical-luminescence responses of
关键词	CuInS2 quantum dots core shell structure repetitive loading stress strain sensing photoluminescence properties
DOI	10.1021/acsanm.2c00573
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000813096700001
关键词[WOS]	VI SEMICONDUCTOR NANOCRYSTALS ; SOLID PHASE-TRANSITION ; STRUCTURAL TRANSFORMATIONS ; SIZE DEPENDENCE ; LUMINESCENCE
WOS研究方向	Science & Technology - Other Topics ; Materials Science
WOS类目	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
资助项目	National Natural Science Foundation of China (NSFC)[11790292] ; National Natural Science Foundation of China (NSFC)[11672298] ; National Natural Science Foundation of China (NSFC)[22177115] ; NSFC[11988102] ; Youth Innovation Promotion Association CAS[2018042] ; National Key Research Program of China[2018YFA0208800]
项目资助者	National Natural Science Foundation of China (NSFC) ; NSFC ; Youth Innovation Promotion Association CAS ; National Key Research Program of China
论文分区	二类
力学所作者排名	1
RpAuthor	Jing, Lihong ; Xiao, Pan
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/89301
专题	非线性力学国家重点实验室
作者单位	1.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China; 3.Chinese Acad Sci, Inst Chem, Key Lab Colloid Interface & Chem Thermodynam, Beijing 100190, Peoples R China; 4.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 99077, Peoples R China; 5.City Univ Hong Kong, Ctr Funct Photon, Kowloon, Hong Kong 99077, Peoples R China
推荐引用方式 GB/T 7714	Wang JD,Ning HR,Wang J,et al. Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors[J]. ACS APPLIED NANO MATERIALS,2022,5,4,:5617-5624.
APA	王俊刁,Ning HR,王军,Kershaw SV,Jing LH,&肖攀.(2022).Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors.ACS APPLIED NANO MATERIALS,5(4),5617-5624.
MLA	王俊刁,et al."Effects of Repetitive Pressure on the Photoluminescence of Bare and ZnS-Capped CuInS2 Quantum Dots: Implications for Nanoscale Stress Sensors".ACS APPLIED NANO MATERIALS 5.4(2022):5617-5624.

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