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Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
Authors:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering 期刊论文
Applied Physics Letters, 2006, 卷号: 89, 期号: 20, 页码: Art.No.202102
Authors:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Dai RX;  Bai YM;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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