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Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
Authors:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  Favorite  |  View/Download：705/173  |  Submit date：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
FexSi grown with mass-analyzed low-energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
Authors:  Liu LF;  Chen NF(陈诺夫);  Zhang FQ(张富强);  Chen CL;  Li YL;  Yang SY;  Liu Z;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(224Kb)  |  Favorite  |  View/Download：612/141  |  Submit date：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion Beam depositIon  Semiconducting Silicon  Doped Si-mn  Spin-photonics  Thin-films  Silicon  Gas