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Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
Authors:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
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Molecular-beam Epitaxy  
Thermal test and analysis of concentrator solar cells 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
Authors:  Cui M;  Chen NF(陈诺夫);  Wu JL;  Liu L;  Wang P;  Wang YS;  Bai YM
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Concentrator Solar Cells  Concentrator Systems  Gainp/gaas/ge  High Concentrations  Metal Organic  Passive Cooling  Photovoltaic Solar Cells  Temperature Differences  Theoretical Models  Thermal Conductions  Thermal Resistance  Triple Junctions  Upper Surfaces  
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Authors:  Yin ZG;  Chen NF(陈诺夫);  Dai RX(戴瑞烜);  Liu L;  Zhang XW;  Wang XH;  Wu JL;  Chai CL;  Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Nanostructures  Physical Vapor Deposition Processes  Zno  Semiconducting Materials  Thin-films  Optical-properties  Vapor-deposition  Growth-mechanism  Nanowires  Nanosheets  Sapphire  Emission  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
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Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 279, 期号: 3-4, 页码: 272-275
Authors:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Wu JL;  Liu ZK;  Yang SY;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
Authors:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Li YL;  Wu JL;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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X-ray Diffraction  Liquid Phase Epitaxy  Semiconducting Ternary Compounds  
Combined Effects of Silica Filler and Its Interface in Epoxy Resin 期刊论文
Acta Materialia, 2002, 卷号: 50, 期号: 17, 页码: 4369-4377
Authors:  Wang HY(汪海英);  Bai YL(白以龙);  Liu S(刘胜);  Wu JL;  Wong CP;  Wang, HY (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100080, Peoples R China.
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