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(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
Authors:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Li YL;  Chai CL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Auger Electron Spectroscopy  X-ray Diffraction  Ion-beam Epitaxy  Gadolinium Compounds  Metal-insulator-transition  Epitaxy  
Magnetic Properties of Mn-Implanted n-Type Ge 期刊论文
Journal of Crystal Growth, 2004, 卷号: 273, 期号: 1-2, 页码: 106-110
Authors:  Liu LF;  Chen NF(陈诺夫);  Chen CL;  Li YL;  Yin ZG;  Yang F;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(200Kb)  |  Favorite  |  View/Download：879/195  |  Submit date：2007/06/15