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Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
Authors:  Liu LF;  Chen NF(陈诺夫);  Song SL;  Yin ZG;  Yang F;  Chai CL;  Yang SY;  Liu ZK;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Investigation of Mn-Implanted n-Type Ge 期刊论文
Journal of Crystal Growth, 2004, 卷号: 265, 期号: 3-4, 页码: 466-470
Authors:  Liu LF;  Chen NF(陈诺夫);  Yin ZG;  Yang F;  Zhou JP;  Zhang FQ;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
Authors:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Li YL;  Chai CL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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Auger Electron Spectroscopy  X-ray Diffraction  Ion-beam Epitaxy  Gadolinium Compounds  Metal-insulator-transition  Epitaxy  
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
Authors:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
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Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
Mn implanted GaAs by low energy ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
Authors:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Yin ZG;  Li YL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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X-ray Diffraction  Ion Beam Deposit  Magnetic Materials  Semiconducting Gallium Arsenide  Curie-temperature  Semiconductors  Ferromagnetism  System  Mn)As  (Ga  Gan