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Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
作者:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  收藏  |  浏览/下载：654/110  |  提交时间：2009/08/03
Molecular-beam Epitaxy  
Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
作者:  Liu L;  Chen NF(陈诺夫);  Gao FB;  Yin ZQ;  Cui M;  Bai YM;  Zhang XW
浏览  |  Adobe PDF(370Kb)  |  收藏  |  浏览/下载：165/56  |  提交时间：2017/06/01
Gainassb  Gasb  Lpe  Segregation Coefficient  Thermophotovoltaic Cell  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：918/263  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：660/188  |  提交时间：2007/06/15
Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering 期刊论文
Journal of Crystal Growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Yang F;  Peng CT;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1544/450  |  提交时间：2007/06/15
p-type Zn1-xMgxO Films with Sb Doping by Radio-Frequency Magnetron Sputtering 期刊论文
Applied Physics Letters, 2006, 卷号: 89, 期号: 20, 页码: Art.No.202102
作者:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Dai RX;  Bai YM;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(145Kb)  |  收藏  |  浏览/下载：1049/354  |  提交时间：2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
作者:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：693/168  |  提交时间：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
Structural and magnetic properties of insulating Zn1-xCoxO thin films 期刊论文
Journal of Applied Physics, 2004, 卷号: 96, 期号: 9, 页码: 5093-5096
作者:  Yin Z;  Chen NF(陈诺夫);  Chai CL;  Yang F;  Yin, Z (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(275Kb)  |  收藏  |  浏览/下载：679/193  |  提交时间：2009/08/03
Doped Zno Films  Electric Properties  Semiconductors  Ferromagnetism  Spintronics  Design  
(Ga,Mn,N) Compounds Growth with Mass-Analyzed Low Energy Dual Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2003, 卷号: 252, 期号: 1-3, 页码: 202-207
作者:  Zhang FQ(张富强);  Chen NF(陈诺夫);  Liu XL;  Liu ZK;  Yang SY;  Chai CL
Adobe PDF(133Kb)  |  收藏  |  浏览/下载：1634/287  |  提交时间：2007/06/15