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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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Source Publication:Journal of Crystal Growth
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Improvement of the thermal design in the SiC PVT growth process
期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Submit date:2014/02/13
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Numerical simulation of ammonothermal growth processes of GaN crystals
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Single-crystals
Gallium Nitride
Heat-transfer
Fluid-flow
Influence Of Micro-Impurity On Protein Crystal Growth Studied By The Etch Figure Method
期刊论文
Journal of Crystal Growth, 2009, 卷号: 311, 期号: 3, 页码: 548-552
Authors:
Dai GL(戴国亮)
;
Liu XY(刘兴宇)
;
Sazaki G
;
Zhang XG
;
Dai GL
Adobe PDF(271Kb)
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View/Download:922/217
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Submit date:2009/08/03
Biocrystallization
Etching
Impurities
Lysozyme
Egg-white Lysozyme
Macromolecular Impurities
Crystallization
Net-like Ferromagnetic Mnsb Film Deposited on Porous Silicon Substrates
期刊论文
Journal of Crystal Growth, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:
Dai RX
;
Chen NF(陈诺夫)
;
Zhang XW
;
Dai, RX (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Submit date:2007/06/15
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method
期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Authors:
Yin ZG
;
Chen NF(陈诺夫)
;
Dai RX(戴瑞烜)
;
Liu L
;
Zhang XW
;
Wang XH
;
Wu JL
;
Chai CL
;
Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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View/Download:979/202
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Submit date:2009/08/03
Nanostructures
Physical Vapor Deposition Processes
Zno
Semiconducting Materials
Thin-films
Optical-properties
Vapor-deposition
Growth-mechanism
Nanowires
Nanosheets
Sapphire
Emission
Proper orthogonal decomposition of oscillatory Marangoni flow in half-zone liquid bridges of low-Pr fluids
期刊论文
Journal of Crystal Growth, 2007, 卷号: 307, 期号: 1, 页码: 155-170
Authors:
Li K(李凯)
;
Imaishi N
;
Jing CJ
;
Yoda S
;
Imaishi, N (reprint author), Kyushu Univ, Inst Mat Chem & Engn, 6-1 Kasugakoen, Kasuga, Fukuoka 8168580, Japan.
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View/Download:854/167
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Submit date:2009/08/03
Computer Simulation
Fluid Flows
Half-zone Liquid Bridge
Marangoni Flow
Oscillatory Flow
Microgravity Condition
Low-prandtl Number Fluid
3-dimensional Numerical-simulation
Thermal-convection
Dynamical Models
Instabilities
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy
期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Authors:
Gao FB
;
Chen NF(陈诺夫)
;
Liu L
;
Zhang XW
;
Wu JL
;
Yin ZG
;
Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
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View/Download:912/262
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Submit date:2009/08/03
Crystal Structure
Liquid-phase Epitaxy
Semiconducting Iii-v Materials
Molecular-beam Epitaxy
Transport-properties
Inas1-xsbx
Alloys
Inassb
Insb
Gap
Photoluminescence
Inasxsb1-x/gaas
Superlattices
Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering
期刊论文
Journal of Crystal Growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
Authors:
Wang P
;
Chen NF(陈诺夫)
;
Yin ZG
;
Yang F
;
Peng CT
;
Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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View/Download:1540/449
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Submit date:2007/06/15
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport
期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:
Pendurti S
;
Chen QS(陈启生)
;
Prasad V
;
Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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Submit date:2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Adobe PDF(228Kb)
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Submit date:2007/06/15
Growth Models
X-ray Diffraction
Growth From Vapor
Single Crystal Growth
Silicon Carbide