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Space Program SJ-10 of Microgravity Research 期刊论文
MICROGRAVITY SCIENCE AND TECHNOLOGY, 2014, 卷号: 26, 期号: 3, 页码: 159-169
作者:  Hu WR(胡文瑞);  Zhao JF(赵建福);  Long M(龙勉);  Zhang XW;  Liu QS(刘秋生);  Hou MY;  Kang Q(康琦);  Wang YR(王育人);  Xu SH(徐升华);  Kong WJ;  Zhang H;  Wang SF(王双峰);  Sun YQ;  Hang HY;  Huang YP;  Cai WM;  Zhao Y;  Dai JW;  Zheng HQ;  Duan EK;  Wang JF;  Hu, WR (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, Key Lab Micrograv, Beijing 100190, Peoples R China.
浏览  |  Adobe PDF(250Kb)  |  收藏  |  浏览/下载：1238/272  |  提交时间：2014/12/18
Microgravity Science  Microgravity Fluid Physics  Microgravity Combustion  Space Materials Science  Space Life Science  Radiation Biology  Gravitational Biology  Space Biotechnology  Sj-10  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
作者:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  收藏  |  浏览/下载：649/109  |  提交时间：2009/08/03
Molecular-beam Epitaxy  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：917/262  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：656/186  |  提交时间：2007/06/15
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure 期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Peng CT;  Chen NF(陈诺夫);  Wu JL;  Yin ZG;  Yu YD;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：939/233  |  提交时间：2007/06/15