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Superelastic And Spring Properties Of Si3N4 Microcoils 期刊论文
Advanced Materials, 2008, 页码: 1738-+
作者:  Cao CB;  Du HL;  Xu YJ;  Zhu HS;  Zhang TH(张泰华);  Yang R(杨荣);  Cao, CB (reprint author), Beijing Inst Technol, Res Ctr Mat Sci, Beijing 100081, Peoples R China.
Adobe PDF(204Kb)  |  收藏  |  浏览/下载：865/187  |  提交时间：2009/08/03
Chemical-vapor-deposition  Silicon-nitride  Carbon Nanotubes  Alpha-si3n4  Growth  Nanohelices  Nanosprings  Nanowires  Mechanics  Nanocoils  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
作者:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  收藏  |  浏览/下载：650/109  |  提交时间：2009/08/03
Molecular-beam Epitaxy  
Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy 会议论文
Solid State Lighting and Solar Energy Technologies, Beijing, China, November 12, 2007 - November 14, 2007
作者:  Liu L;  Chen NF(陈诺夫);  Gao FB;  Yin ZQ;  Cui M;  Bai YM;  Zhang XW
浏览  |  Adobe PDF(370Kb)  |  收藏  |  浏览/下载：162/55  |  提交时间：2017/06/01
Gainassb  Gasb  Lpe  Segregation Coefficient  Thermophotovoltaic Cell  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：917/262  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：657/186  |  提交时间：2007/06/15
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
作者:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Li YL;  Wu JL;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：670/156  |  提交时间：2009/08/03
X-ray Diffraction  Liquid Phase Epitaxy  Semiconducting Ternary Compounds  
Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV 期刊论文
Applied Physics A-Materials Science & Processing, 1998, 卷号: 66, 期号: 5, 页码: 565-567
作者:  Xu ZL(徐自亮);  Xu WJ;  Li L;  Xu, ZL (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab China, Beijing 100080, Peoples R China.
Adobe PDF(88Kb)  |  收藏  |  浏览/下载：714/222  |  提交时间：2007/06/15