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Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering 期刊论文
Journal of Crystal Growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Yang F;  Peng CT;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1541/449  |  提交时间：2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
作者:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：691/167  |  提交时间：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
FexSi grown with mass-analyzed low-energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
作者:  Liu LF;  Chen NF(陈诺夫);  Zhang FQ(张富强);  Chen CL;  Li YL;  Yang SY;  Liu Z;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：594/133  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion Beam depositIon  Semiconducting Silicon  Doped Si-mn  Spin-photonics  Thin-films  Silicon  Gas  
Influence of Coriolis force on bulk flows during horizontal Bridgman growth on a centrifuge: a numerical study 期刊论文
Journal of Crystal Growth, 1998, 卷号: 193, 期号: 3, 页码: 430-442
作者:  Ma WJ(马文驹);  Khoo BC;  Xu D;  Xu, D (reprint author), Inst High Performance Comp, 89 Sci Pk Dr,01-05-08,Singapore Sci Pk 1, Singapore 118261, Singapore.
Adobe PDF(990Kb)  |  收藏  |  浏览/下载：677/171  |  提交时间：2007/06/15