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Knowledge Management System of Institue of Mechanics, CAS
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Source Publication:Journal of Crystal Growth
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Improvement of the thermal design in the SiC PVT growth process
期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
Authors:
Yan JY(颜君毅)
;
Chen QS(陈启生)
;
Jiang YN(姜燕妮)
;
Zhang H
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Submit date:2014/02/13
Fluid Flows
Mass Transfer
Growth From Vapor
Semiconducting Silicon Compounds
Numerical simulation of ammonothermal growth processes of GaN crystals
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
Authors:
Jiang YN(姜燕妮)
;
Chen QS(陈启生)
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)
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Submit date:2012/04/01
Convection
Fluid Flow
Growth Models
Ammonothermal Growth
Gan
Single-crystals
Gallium Nitride
Heat-transfer
Fluid-flow
Net-like Ferromagnetic Mnsb Film Deposited on Porous Silicon Substrates
期刊论文
Journal of Crystal Growth, 2007, 卷号: 299, 期号: 1, 页码: 142-145
Authors:
Dai RX
;
Chen NF(陈诺夫)
;
Zhang XW
;
Dai, RX (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(270Kb)
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View/Download:735/177
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Submit date:2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Submit date:2007/06/15
Growth Models
X-ray Diffraction
Growth From Vapor
Single Crystal Growth
Silicon Carbide
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
Authors:
Lu J
;
Zhang ZB(张自兵)
;
Chen QS(陈启生)
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Submit date:2007/06/15
Computer Simulation
Growth Model
Mass Transfer
Growth From Vapor
Seed Crystals
Semiconducting Silicon Compounds
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
Adobe PDF(228Kb)
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Submit date:2007/12/18
Tailoring of dendritic microstructure in solidification processing by crucible vibration
期刊论文
Journal of Crystal Growth, 2005, 卷号: 275, 期号: 1-2, 页码: e1579-e1583
Authors:
Nguyen-Thi H
;
Reinhart G
;
Zhou B
;
Billia B
;
Liu QS(刘秋生)
;
Lyubimova TP
Adobe PDF(505Kb)
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Submit date:2007/06/15
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit
期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
Authors:
Song SL
;
Chen NF(陈诺夫)
;
Zhou JP
;
Li YL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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View/Download:1049/187
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Submit date:2009/08/03
Auger Electron Spectroscopy
X-ray Diffraction
Ion-beam Epitaxy
Gadolinium Compounds
Metal-insulator-transition
Epitaxy
Effects of Induction Heating on Temperature Distribution and Growth Rate in Large-Size SiC Growth System
期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 320-326
Authors:
Chen QS(陈启生)
;
Gao P(高鹏)
;
Hu WR(胡文瑞)
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Submit date:2007/06/15
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides
期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 271-277
Authors:
Chen QS(陈启生)
;
Pendurti S
;
Prasad V
Adobe PDF(435Kb)
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Submit date:2007/06/15