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Elastic-plastic behaviors of silicon carbide crystals 期刊论文
MATERIALS TODAY COMMUNICATIONS, 2021, 卷号: 27, 页码: 9
作者:  Zhu P(朱鹏);  Chen QS(陈启生);  Prasad, Vishwanath
Adobe PDF(3268Kb)  |  收藏  |  浏览/下载：235/60  |  提交时间：2021/09/07
Dislocations  Elastic-plastic material  Finite elements  
Effect of Process Parameters on Defects, Melt Pool Shape, Microstructure, and Tensile Behavior of 316L Stainless Steel Produced by Selective Laser Melting 期刊论文
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2020, 页码: 16
作者:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Feng YL;  Chen LF;  Hou JY(侯静宇);  Xu HJ
Adobe PDF(6860Kb)  |  收藏  |  浏览/下载：387/77  |  提交时间：2020/11/30
Selective laser melting  Defects  Melt pool shape  Primary dendrite spacing  Mechanical properties  316L stainless steel  
Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
作者:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
Adobe PDF(963Kb)  |  收藏  |  浏览/下载：415/94  |  提交时间：2020/03/11
Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Instability of thermocapillary-buoyancy convection in droplet migration 期刊论文
PHYSICS OF FLUIDS, 2019, 卷号: 31, 期号: 12, 页码: 12
作者:  Hu KX(胡开鑫);  Yan CY;  Chen QS(陈启生)
Adobe PDF(3269Kb)  |  收藏  |  浏览/下载：262/110  |  提交时间：2020/06/15
Factor analysis of selective laser melting process parameters with normalised quantities and Taguchi method 期刊论文
OPTICS AND LASER TECHNOLOGY, 2019, 卷号: 119, 页码: 11
作者:  Jiang HZ(蒋华臻);  Li ZY(李正阳);  Feng T;  Wu PY;  Chen QS(陈启生);  Fen YL;  Li SW;  Gao H(高欢);  Xu HJ
浏览  |  Adobe PDF(9815Kb)  |  收藏  |  浏览/下载：590/153  |  提交时间：2019/10/21
Additive manufacturing  Parameters optimizing  Dimensionless quantities  Selective laser melting  316L stainless steel  
Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Adobe PDF(1817Kb)  |  收藏  |  浏览/下载：599/202  |  提交时间：2014/02/13
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Improvement of the thermal design in the SiC PVT growth process 会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
浏览  |  Adobe PDF(1817Kb)  |  收藏  |  浏览/下载：716/209  |  提交时间：2014/02/24
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Modeling on ammonothermal growth of GaN semiconductor crystals 期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Jiang YN(姜燕妮);  Li W(李炜);  Chen, QS;  Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
Adobe PDF(968Kb)  |  收藏  |  浏览/下载：1204/410  |  提交时间：2013/01/18
Gan Crystal  Baffle Opening  Ammonothermal Growth  Mass Transfer  Gallium Nitride  Supercritical Ammonia  Single-crystals  Transport  Seed  
SiC晶体生长中流场的优化设计 期刊论文
工程热物理学报, 2011, 卷号: 32, 期号: 2, 页码: 308-311
作者:  颜君毅;  陈启生;  姜燕妮;  李炜
Adobe PDF(847Kb)  |  收藏  |  浏览/下载：851/186  |  提交时间：2012/04/01
碳化硅晶体  Pvt法  场协同  浓度场  流场  
Progress In Modeling Of Fluid Flows In Crystal Growth Processes 期刊论文
Progress In Natural Science, 2008, 页码: 1465-1473
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Qin M(秦明)
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1030/261  |  提交时间：2009/08/03
Modeling  Crystal Growth  Fluid Flow  Czochralski Growth  Ammonothermal Growth  Physical Vapor Transport  Transverse Magnetic-field  Physical-vapor Transport  Sic-bulk Growth  Silicon Czochralski Furnace  Thermal-capillary Analysis  Radiative Heat-transfer  Sublimation Growth  Numerical-simulation  Ammonothermal Growth  Oxygen Distribution