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On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
作者:  Yin ZG;  Chen NF(陈诺夫);  Dai RX(戴瑞烜);  Liu L;  Zhang XW;  Wang XH;  Wu JL;  Chai CL;  Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(719Kb)  |  收藏  |  浏览/下载：990/207  |  提交时间：2009/08/03
Nanostructures  Physical Vapor Deposition Processes  Zno  Semiconducting Materials  Thin-films  Optical-properties  Vapor-deposition  Growth-mechanism  Nanowires  Nanosheets  Sapphire  Emission  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：921/264  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure 期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Peng CT;  Chen NF(陈诺夫);  Wu JL;  Yin ZG;  Yu YD;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：946/236  |  提交时间：2007/06/15
Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
作者:  Liu LF;  Chen NF(陈诺夫);  Song SL;  Yin ZG;  Yang F;  Chai CL;  Yang SY;  Liu ZK;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(278Kb)  |  收藏  |  浏览/下载：873/177  |  提交时间：2007/06/15
Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 279, 期号: 3-4, 页码: 272-275
作者:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Wu JL;  Liu ZK;  Yang SY;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(184Kb)  |  收藏  |  浏览/下载：793/214  |  提交时间：2007/06/15
The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N 期刊论文
Journal of Crystal Growth, 2004, 卷号: 262, 期号: 1-4, 页码: 287-289
作者:  Zhang FQ(张富强);  Chen NF(陈诺夫);  Liu XL;  Liu ZK;  Yang SY;  Chai CL;  Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(168Kb)  |  收藏  |  浏览/下载：634/166  |  提交时间：2009/08/03
X-ray Diffraction  Ion Beam depositIon  Gan/al2o3  Ferromagnetic Materials  Implanted Gan  Injection  
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
作者:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Li YL;  Wu JL;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：677/159  |  提交时间：2009/08/03
X-ray Diffraction  Liquid Phase Epitaxy  Semiconducting Ternary Compounds  
Magnetic Properties of Mn-Implanted n-Type Ge 期刊论文
Journal of Crystal Growth, 2004, 卷号: 273, 期号: 1-2, 页码: 106-110
作者:  Liu LF;  Chen NF(陈诺夫);  Chen CL;  Li YL;  Yin ZG;  Yang F;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(200Kb)  |  收藏  |  浏览/下载：866/190  |  提交时间：2007/06/15
Investigation of Mn-Implanted n-Type Ge 期刊论文
Journal of Crystal Growth, 2004, 卷号: 265, 期号: 3-4, 页码: 466-470
作者:  Liu LF;  Chen NF(陈诺夫);  Yin ZG;  Yang F;  Zhou JP;  Zhang FQ;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(276Kb)  |  收藏  |  浏览/下载：671/158  |  提交时间：2007/06/15
FexSi grown with mass-analyzed low-energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
作者:  Liu LF;  Chen NF(陈诺夫);  Zhang FQ(张富强);  Chen CL;  Li YL;  Yang SY;  Liu Z;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：601/136  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion Beam depositIon  Semiconducting Silicon  Doped Si-mn  Spin-photonics  Thin-films  Silicon  Gas