中文版 | English

在结果中检索

IMECH-IR

浏览/检索结果: 共12条，第1-10条 帮助

限定条件                
已选(0)清除 条数/页：   排序方式：
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
作者:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：692/167  |  提交时间：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
作者:  Chen CL;  Chen NF(陈诺夫);  Liu LF;  Li YL;  Wu JL;  Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(117Kb)  |  收藏  |  浏览/下载：671/157  |  提交时间：2009/08/03
X-ray Diffraction  Liquid Phase Epitaxy  Semiconducting Ternary Compounds  
Mn implanted GaAs by low energy ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
作者:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Yin ZG;  Li YL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：619/135  |  提交时间：2009/08/03
X-ray Diffraction  Ion Beam Deposit  Magnetic Materials  Semiconducting Gallium Arsenide  Curie-temperature  Semiconductors  Ferromagnetism  System  Mn)As  (Ga  Gan  
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
作者:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Li YL;  Chai CL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(589Kb)  |  收藏  |  浏览/下载：1057/191  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion-beam Epitaxy  Gadolinium Compounds  Metal-insulator-transition  Epitaxy  
Magnetic Properties of Mn-Implanted n-Type Ge 期刊论文
Journal of Crystal Growth, 2004, 卷号: 273, 期号: 1-2, 页码: 106-110
作者:  Liu LF;  Chen NF(陈诺夫);  Chen CL;  Li YL;  Yin ZG;  Yang F;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(200Kb)  |  收藏  |  浏览/下载：857/186  |  提交时间：2007/06/15
FexSi grown with mass-analyzed low-energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
作者:  Liu LF;  Chen NF(陈诺夫);  Zhang FQ(张富强);  Chen CL;  Li YL;  Yang SY;  Liu Z;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(224Kb)  |  收藏  |  浏览/下载：594/133  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion Beam depositIon  Semiconducting Silicon  Doped Si-mn  Spin-photonics  Thin-films  Silicon  Gas  
Asymptotic analysis for a crack on interface of damaged materials 期刊论文
International Journal of Fracture, 1998, 卷号: 91, 期号: 1, 页码: 47-60
作者:  Wu YL(吴永礼);  Dong ZF(董智法);  Li GC(李国琛);  Wu, YL (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(156Kb)  |  收藏  |  浏览/下载：487/145  |  提交时间：2007/06/15
Plane-stress asymptotic fields for interface crack between elastic and pressure-sensitive dilatant materials 期刊论文
Engineering Fracture Mechanics, 1998, 卷号: 60, 期号: 2, 页码: 205-219
作者:  Yu HR(余宏荣);  Wu YL(吴永礼);  Li GC(李国琛);  Yu, HR (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(615Kb)  |  收藏  |  浏览/下载：640/172  |  提交时间：2007/06/15
燃烧气脉冲除灰技术研究 成果
燃烧气脉冲除灰技术研究: 中国科学院科技进步奖, 一等奖, 1998.
主要完成人:  吴承康;  孙文超;  何蔚琅;  满秀芬;  朱芙英;  詹焕青;  陈丽芳;  阎明山;  陈斌;  余立新;  樊未军;  原鲲
收藏  |  浏览/下载：908/0  |  提交时间：2009/07/21
Plane strain asymptotic fields for cracks terminating at the interface between elastic and pressure-sensitive dilatant materials 期刊论文
International Journal of Fracture, 1997, 卷号: 86, 期号: 4, 页码: 343-360
作者:  Yu HR(余宏荣);  Wu YL(吴永礼);  Li GC(李国琛);  Yu, HR (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：496/106  |  提交时间：2009/08/03
Asymptotic Field  Interface Crack  Pressure-sensitive Dilatant Material  Bimaterial Interfaces  Polycarbonate  Deformation  Behavior