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Quantum Efficiency And Temperature Coefficients Of Gainp/Gaas Dual-Junction Solar Cell 期刊论文
Science in China Series E-Technological Sciences, 2009, 卷号: 52, 期号: 5, 页码: 1176-1180
作者:  Liu L(刘蕾);  Chen NF(陈诺夫);  Bai YM(白一鸣);  Cui M;  Zhang H;  Gao FB;  Yin ZG;  Zhang XW;  Liu L
Adobe PDF(197Kb)  |  收藏  |  浏览/下载：1186/300  |  提交时间：2009/08/03
Quantum Efficiency  Temperature Coefficient  Solar Cell  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
作者:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  收藏  |  浏览/下载：650/109  |  提交时间：2009/08/03
Molecular-beam Epitaxy  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：917/262  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：657/186  |  提交时间：2007/06/15