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Liquid-Phase-Epitaxy-Grown Inasxsb1-X/Gaas for Room-Temperature 8-12 Mu M Infrared Detectors 期刊论文
Applied Physics Letters, 2006, 卷号: 68, 期号: 24, 页码: 242108
作者:  Peng CT;  Chen NF(陈诺夫);  Gao FB;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(101Kb)  |  收藏  |  浏览/下载：656/186  |  提交时间：2007/06/15
Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering 期刊论文
Journal of Crystal Growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:  Wang P;  Chen NF(陈诺夫);  Yin ZG;  Yang F;  Peng CT;  Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)  |  收藏  |  浏览/下载：1541/449  |  提交时间：2007/06/15
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure 期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Peng CT;  Chen NF(陈诺夫);  Wu JL;  Yin ZG;  Yu YD;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：939/233  |  提交时间：2007/06/15