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Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  收藏  |  浏览/下载：849/234  |  提交时间：2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  Gallium Nitride  
Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
作者:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  收藏  |  浏览/下载：708/192  |  提交时间：2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals 期刊论文
Journal of Rare Earths, 2007, 卷号: 25, 页码: 345-348
作者:  Chen QS(陈启生);  Deng GY(邓谷雨);  Ebadian A;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(374Kb)  |  收藏  |  浏览/下载：752/188  |  提交时间：2009/08/03
Czochralski Growth  Flow Field  Temperature Distributions  Cusp Magnetic Field  
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(596Kb)  |  收藏  |  浏览/下载：208/81  |  提交时间：2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds  
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
作者:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：889/239  |  提交时间：2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：767/228  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：828/211  |  提交时间：2007/06/15
Modeling of ammonothermal growth of gallium nitride single crystals 期刊论文
Journal of Materials Science, 2005
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(1094Kb)  |  收藏  |  浏览/下载：644/171  |  提交时间：2007/06/15
Effects of Baffle Design on Fluid Flow and Heat Transfer in Ammonothermal Growth System of Nitrides 期刊论文
Journal of Crystal Growth, 2004, 卷号: 266, 期号: 1-3, 页码: 271-277
作者:  Chen QS(陈启生);  Pendurti S;  Prasad V
Adobe PDF(435Kb)  |  收藏  |  浏览/下载：638/134  |  提交时间：2007/06/15
Analysis of Temperature and Pressure Changes in Liquefied Natural Gas (LNG) Cryogenic Tanks 期刊论文
Cryogenics, 2004, 卷号: 44, 期号: 10, 页码: 701-709
作者:  Chen QS(陈启生);  Wegrzyn J;  Prasad V;  Wegrzyn, J (reprint author), Brookhaven Natl Lab, Energy Sci & Technol Dept, Upton, NY 11973 USA.
Adobe PDF(350Kb)  |  收藏  |  浏览/下载：4462/1777  |  提交时间：2007/06/15