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Atomic segregation at twin boundaries in a Mg-Ag alloy 期刊论文
SCRIPTA MATERIALIA, 2020, 卷号: 178, 页码: 193-197
作者:  Chen XF(陈雪飞);  Xiao LR;  Ding ZG;  Liu W;  Zhu YT;  Wu XL(武晓雷)
浏览  |  Adobe PDF(2575Kb)  |  收藏  |  浏览/下载：263/64  |  提交时间：2020/04/07
Segregation  Twin boundary  Magnesium alloy  HAADF-STEM  
Selection criteria and feasibility of the inversion model for azimuthal electromagnetic logging while drilling (LWD) 期刊论文
PETROLEUM EXPLORATION AND DEVELOPMENT, 2018, 卷号: 45, 期号: 5, 页码: 974-982
作者:  Wang L;  Fan YR;  Yuan C;  Wu ZG;  Deng SQ;  Zhao WN(赵伟娜)
浏览  |  Adobe PDF(3950Kb)  |  收藏  |  浏览/下载：340/75  |  提交时间：2018/12/12
logging-while-driling  azimuthal electromagnetic logging  electromagnetic logging  inversion model  inversion algorithm  geosteering  bed boundary  
Structural, Electrical, And Optical Properties Of Inasxsb1-X Epitaxial Films Grown By Liquid-Phase Epitaxy 期刊论文
Journal of Applied Physics, 2008
作者:  Gao FB;  Chen NF(陈诺夫);  Zhang XW;  Wang Y;  Liu L(刘蕾);  Yin ZG;  Wu JL
Adobe PDF(352Kb)  |  收藏  |  浏览/下载：654/110  |  提交时间：2009/08/03
Molecular-beam Epitaxy  
On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method 期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
作者:  Yin ZG;  Chen NF(陈诺夫);  Dai RX(戴瑞烜);  Liu L;  Zhang XW;  Wang XH;  Wu JL;  Chai CL;  Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(719Kb)  |  收藏  |  浏览/下载：987/207  |  提交时间：2009/08/03
Nanostructures  Physical Vapor Deposition Processes  Zno  Semiconducting Materials  Thin-films  Optical-properties  Vapor-deposition  Growth-mechanism  Nanowires  Nanosheets  Sapphire  Emission  
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
Journal of Crystal Growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
作者:  Gao FB;  Chen NF(陈诺夫);  Liu L;  Zhang XW;  Wu JL;  Yin ZG;  Gao, FB (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：918/263  |  提交时间：2009/08/03
Crystal Structure  Liquid-phase Epitaxy  Semiconducting Iii-v Materials  Molecular-beam Epitaxy  Transport-properties  Inas1-xsbx  Alloys  Inassb  Insb  Gap  Photoluminescence  Inasxsb1-x/gaas  Superlattices  
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure 期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Peng CT;  Chen NF(陈诺夫);  Wu JL;  Yin ZG;  Yu YD;  Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：940/234  |  提交时间：2007/06/15