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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [1]
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Chai CL [1]
Liu XL [1]
Liu ZK [1]
Yang SY [1]
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张富强 [1]
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2004 [1]
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The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N
期刊论文
Journal of Crystal Growth, 2004, 卷号: 262, 期号: 1-4, 页码: 287-289
Authors:
Zhang FQ(张富强)
;
Chen NF(陈诺夫)
;
Liu XL
;
Liu ZK
;
Yang SY
;
Chai CL
;
Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Submit date:2009/08/03
X-ray Diffraction
Ion Beam depositIon
Gan/al2o3
Ferromagnetic Materials
Implanted Gan
Injection