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第七届中国机构知识库学术研讨会报告:力学研究所机构知识库建设与应用实践 演示报告
来自: 第七届中国机构知识库学术研讨会, 武汉 ,2019
Authors:  张自兵;  徐以鸿
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机构知识库  特色数据  仪器设备  产出分析  论文绩效  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
Authors:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
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Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
View  |  Adobe PDF(295Kb)  |  Favorite  |  View/Download:592/186  |  Submit date:2007/06/15
Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
View  |  Adobe PDF(228Kb)  |  Favorite  |  View/Download:596/197  |  Submit date:2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
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Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
Adobe PDF(228Kb)  |  Favorite  |  View/Download:775/181  |  Submit date:2007/12/18
碳化硅晶体生长过程中的温度场与应力场的数值模拟 学位论文
硕士论文,北京: 中国科学院研究生院, 2005
Authors:  张自兵
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3D Finite Volume Scheme for Czochralski Crystal Growth 会议论文
Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, Sept. 5-10, 2004, Beijing, China
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
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Numerical Simulation of Heat Transfer and Kinetics in the Bulk Growth of Silicon Carbide 会议论文
Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing, China
Authors:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生)
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3D Finite Volume Scheme for Czochralski Single Crystal Growth 会议论文
Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics,Sept. 5-10, 2004, Beijing,China, Beijing,China, Sept. 5-10, 2004
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen QS(陈启生)
Adobe PDF(73Kb)  |  Favorite  |  View/Download:566/80  |  Submit date:2007/12/18