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Progress In Modeling Of Fluid Flows In Crystal Growth Processes 期刊论文
Progress In Natural Science, 2008, 页码: 1465-1473
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Qin M(秦明)
Adobe PDF(423Kb)  |  收藏  |  浏览/下载：1025/259  |  提交时间：2009/08/03
Modeling  Crystal Growth  Fluid Flow  Czochralski Growth  Ammonothermal Growth  Physical Vapor Transport  Transverse Magnetic-field  Physical-vapor Transport  Sic-bulk Growth  Silicon Czochralski Furnace  Thermal-capillary Analysis  Radiative Heat-transfer  Sublimation Growth  Numerical-simulation  Ammonothermal Growth  Oxygen Distribution  
Hydrothermal Instability Of Thermocapillary Convection In Large-Prandtl-Number Liquid Bridges Under Microgravity 期刊论文
Advances In Space Research, 2008, 页码: 2126-2130
作者:  Chen QS(陈启生);  Liu YC(刘亚超);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Natl Micrograv Lab, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：689/157  |  提交时间：2009/08/03
Microgravity  Instability  Liquid Bridge  Floating-zone Convection  Free Surfaces  Volume  Transition  Stability  Flows  
Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals 期刊论文
Journal of Rare Earths, 2007, 卷号: 25, 页码: 345-348
作者:  Chen QS(陈启生);  Deng GY(邓谷雨);  Ebadian A;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(374Kb)  |  收藏  |  浏览/下载：748/188  |  提交时间：2009/08/03
Czochralski Growth  Flow Field  Temperature Distributions  Cusp Magnetic Field  
硅生长过程中磁场对流场及提拉速率的影响 会议论文
庆祝中国力学学会成立50周年暨中国力学学会学术大会’2007, 北京, 2007
作者:  邓谷雨;  陈启生
Adobe PDF(28Kb)  |  收藏  |  浏览/下载：526/164  |  提交时间：2009/07/23
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(596Kb)  |  收藏  |  浏览/下载：206/80  |  提交时间：2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds  
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
作者:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载：884/236  |  提交时间：2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载：764/227  |  提交时间：2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：821/210  |  提交时间：2007/06/15
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(295Kb)  |  收藏  |  浏览/下载：776/241  |  提交时间：2007/06/15
Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
Adobe PDF(295Kb)  |  收藏  |  浏览/下载：646/134  |  提交时间：2007/12/18