IMECH-IR
(本次检索基于用户作品认领结果)

浏览/检索结果: 共10条,第1-10条 帮助

限定条件        
已选(0)清除 条数/页:   排序方式:
一种籽晶温度梯度方法生长碳化硅单晶的装置 专利
发明专利. 一种籽晶温度梯度方法生长碳化硅单晶的装置, 专利号: ZL201210169399.7, 申请日期: 2012-05-28, 授权日期: 2015-11-04
发明人:  陈启生;  颜君毅;  姜燕妮
浏览  |  Adobe PDF(473Kb)  |  收藏  |  浏览/下载:498/65  |  提交时间:2015/11/09
Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
Adobe PDF(1817Kb)  |  收藏  |  浏览/下载:598/202  |  提交时间:2014/02/13
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Improvement of the thermal design in the SiC PVT growth process 会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
作者:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
浏览  |  Adobe PDF(1817Kb)  |  收藏  |  浏览/下载:714/208  |  提交时间:2014/02/24
Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Modeling on ammonothermal growth of GaN semiconductor crystals 期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Jiang YN(姜燕妮);  Li W(李炜);  Chen, QS;  Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
Adobe PDF(968Kb)  |  收藏  |  浏览/下载:1202/409  |  提交时间:2013/01/18
Gan Crystal  Baffle Opening  Ammonothermal Growth  Mass Transfer  Gallium Nitride  Supercritical Ammonia  Single-crystals  Transport  Seed  
磁场对双扩散液层热毛细对流的影响 期刊论文
力学学报, 2012, 卷号: 44, 期号: 3, 页码: 481-486
作者:  李炜;  姜燕妮;  颜君毅;  陈启生
Adobe PDF(514Kb)  |  收藏  |  浏览/下载:542/125  |  提交时间:2013/01/16
热毛细对流  磁场  双扩散  水平温度梯度  
SiC晶体生长中流场的优化设计 期刊论文
工程热物理学报, 2011, 卷号: 32, 期号: 2, 页码: 308-311
作者:  颜君毅;  陈启生;  姜燕妮;  李炜
Adobe PDF(847Kb)  |  收藏  |  浏览/下载:849/186  |  提交时间:2012/04/01
碳化硅晶体  Pvt法  场协同  浓度场  流场  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 会议论文
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  收藏  |  浏览/下载:914/206  |  提交时间:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  收藏  |  浏览/下载:848/234  |  提交时间:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  Gallium Nitride  
氨热法生长氮化镓晶体中传热传质的研究 期刊论文
工程热物理学报, 2009, 卷号: 30, 期号: 9, 页码: 1552-1554
作者:  姜燕妮;  陈启生;  李炜;  颜君毅
Adobe PDF(652Kb)  |  收藏  |  浏览/下载:586/111  |  提交时间:2010/05/03
氨热法  氮化镓  温度场和流场  
Progress In Modeling Of Fluid Flows In Crystal Growth Processes 期刊论文
Progress In Natural Science, 2008, 页码: 1465-1473
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Qin M(秦明)
Adobe PDF(423Kb)  |  收藏  |  浏览/下载:1027/260  |  提交时间:2009/08/03
Modeling  Crystal Growth  Fluid Flow  Czochralski Growth  Ammonothermal Growth  Physical Vapor Transport  Transverse Magnetic-field  Physical-vapor Transport  Sic-bulk Growth  Silicon Czochralski Furnace  Thermal-capillary Analysis  Radiative Heat-transfer  Sublimation Growth  Numerical-simulation  Ammonothermal Growth  Oxygen Distribution