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Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition 期刊论文
Journal of Crystal Growth, 2005, 卷号: 273, 期号: 3-4, 页码: 458-463
作者:  Liu LF;  Chen NF(陈诺夫);  Song SL;  Yin ZG;  Yang F;  Chai CL;  Yang SY;  Liu ZK;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(278Kb)  |  收藏  |  浏览/下载：872/177  |  提交时间：2007/06/15
Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
作者:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
Adobe PDF(461Kb)  |  收藏  |  浏览/下载：693/168  |  提交时间：2009/08/03
Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
Mn implanted GaAs by low energy ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
作者:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Yin ZG;  Li YL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)  |  收藏  |  浏览/下载：623/137  |  提交时间：2009/08/03
X-ray Diffraction  Ion Beam Deposit  Magnetic Materials  Semiconducting Gallium Arsenide  Curie-temperature  Semiconductors  Ferromagnetism  System  Mn)As  (Ga  Gan  
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit 期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
作者:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Li YL;  Chai CL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(589Kb)  |  收藏  |  浏览/下载：1061/192  |  提交时间：2009/08/03
Auger Electron Spectroscopy  X-ray Diffraction  Ion-beam Epitaxy  Gadolinium Compounds  Metal-insulator-transition  Epitaxy  
Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler 期刊论文
Chinese Science Bulletin/中国科学通报(英文版), 2002, 卷号: 47, 期号: 21, 页码: 1780-1782
作者:  Zhang XL;  Zhang FQ(张富强);  Song SL;  Chen NF(陈诺夫);  Wang ZG;  Lin LY;  Zhang, XL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(72Kb)  |  收藏  |  浏览/下载：704/208  |  提交时间：2009/08/03
Electrochemistry C-v  Magnetic Semiconductor  Gamnsb  Iii-v Semiconductors  Magnetotransport Properties  Transport-properties  Magnetoresistance  (In  Heterostructures  Mn)As/(Ga  Al)Sb  Gaas  (Ga  Mn)As