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Molecular dynamics simulation of helium ion implantation into silicon and its migration 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 456, 页码: 53-59
Authors:  Liu L;  Xu ZW;  Li RR;  Zhu R;  Xu J;  Zhao JL;  Wang C(王超);  Nordlund K;  Fu X;  Fang FZ
Favorite  |  View/Download:14/0  |  Submit date:2019/10/14
Molecular dynamics simulation  Ion implantation  Helium  Si  Annealing