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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [7]
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陈诺夫 [6]
Yang SY [5]
Li YL [4]
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Source Publication:Journal of Crystal Growth
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Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:
Chen QS(陈启生)
;
Lu J
;
Zhang ZB(张自兵)
;
Wei GD
;
Prasad V
;
Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
Adobe PDF(228Kb)
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View/Download:762/227
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Submit date:2007/06/15
Growth Models
X-ray Diffraction
Growth From Vapor
Single Crystal Growth
Silicon Carbide
The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N
期刊论文
Journal of Crystal Growth, 2004, 卷号: 262, 期号: 1-4, 页码: 287-289
Authors:
Zhang FQ(张富强)
;
Chen NF(陈诺夫)
;
Liu XL
;
Liu ZK
;
Yang SY
;
Chai CL
;
Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(168Kb)
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View/Download:623/163
  |  
Submit date:2009/08/03
X-ray Diffraction
Ion Beam depositIon
Gan/al2o3
Ferromagnetic Materials
Implanted Gan
Injection
Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy
期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 1-2, 页码: 50-53
Authors:
Chen CL
;
Chen NF(陈诺夫)
;
Liu LF
;
Li YL
;
Wu JL
;
Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(117Kb)
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View/Download:665/155
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Submit date:2009/08/03
X-ray Diffraction
Liquid Phase Epitaxy
Semiconducting Ternary Compounds
Mn implanted GaAs by low energy ion beam deposition
期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
Authors:
Song SL
;
Chen NF(陈诺夫)
;
Zhou JP
;
Yin ZG
;
Li YL
;
Yang SY
;
Liu ZK
;
Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(297Kb)
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View/Download:613/134
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Submit date:2009/08/03
X-ray Diffraction
Ion Beam Deposit
Magnetic Materials
Semiconducting Gallium Arsenide
Curie-temperature
Semiconductors
Ferromagnetism
System
Mn)As
(Ga
Gan
(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit
期刊论文
Journal of Crystal Growth, 2004, 卷号: 260, 期号: 3-4, 页码: 451-455
Authors:
Song SL
;
Chen NF(陈诺夫)
;
Zhou JP
;
Li YL
;
Chai CL
;
Yang SY
;
Liu ZK
;
Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(589Kb)
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View/Download:1049/187
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Submit date:2009/08/03
Auger Electron Spectroscopy
X-ray Diffraction
Ion-beam Epitaxy
Gadolinium Compounds
Metal-insulator-transition
Epitaxy
FexSi grown with mass-analyzed low-energy dual ion beam deposition
期刊论文
Journal of Crystal Growth, 2004, 卷号: 263, 期号: 1-4, 页码: 143-147
Authors:
Liu LF
;
Chen NF(陈诺夫)
;
Zhang FQ(张富强)
;
Chen CL
;
Li YL
;
Yang SY
;
Liu Z
;
Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(224Kb)
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View/Download:588/130
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Submit date:2009/08/03
Auger Electron Spectroscopy
X-ray Diffraction
Ion Beam depositIon
Semiconducting Silicon
Doped Si-mn
Spin-photonics
Thin-films
Silicon
Gas
(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition
期刊论文
Journal of Crystal Growth, 2002, 卷号: 234, 期号: 2-3, 页码: 359-363
Authors:
Yang JL
;
Chen NF(陈诺夫)
;
Liu ZK
;
Yang SY
;
Chai CL
;
Liao MY
;
He HJ
Adobe PDF(125Kb)
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View/Download:2010/430
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Submit date:2009/02/17
X-ray Diffraction