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一种籽晶温度梯度方法生长碳化硅单晶的装置 专利
发明专利. 一种籽晶温度梯度方法生长碳化硅单晶的装置, 专利号: ZL201210169399.7, 申请日期: 2012-05-28, 授权日期: 2015-11-04
Inventors:  陈启生;  颜君毅;  姜燕妮
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Improvement of the thermal design in the SiC PVT growth process 期刊论文
Journal of Crystal Growth, 2014, 卷号: 385, 页码: 34-37
Authors:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Improvement of the thermal design in the SiC PVT growth process 会议论文
7th International Workshop on Modeling in Crystal Growth, Taipei,TW, China, OCT 28-31, 2012
Authors:  Yan JY(颜君毅);  Chen QS(陈启生);  Jiang YN(姜燕妮);  Zhang H;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Key Lab Micrograv, Beijing 100190, Peoples R China.
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Fluid Flows  Mass Transfer  Growth From Vapor  Semiconducting Silicon Compounds  
Instabilities of vortex rings generated by surface-tension gradients between co-axial disks 期刊论文
INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER, 2012, 卷号: 39, 期号: 10, 页码: 1542-1545
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Chen, QS;  Chinese Acad Sci, Inst Mech, Key Lab Micrograv, 15 Beisihuan W Rd, Beijing 100190, Peoples R China.
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Modeling on ammonothermal growth of GaN semiconductor crystals 期刊论文
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2012, 卷号: 58, 期号: 2-3, 页码: 61-73
Authors:  Chen QS(陈启生);  Yan JY(颜君毅);  Jiang YN(姜燕妮);  Li W(李炜);  Chen, QS;  Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China.
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Gan Crystal  Baffle Opening  Ammonothermal Growth  Mass Transfer  Gallium Nitride  Supercritical Ammonia  Single-crystals  Transport  Seed  
磁场对双扩散液层热毛细对流的影响 期刊论文
力学学报, 2012, 卷号: 44, 期号: 3, 页码: 481-486
Authors:  李炜;  姜燕妮;  颜君毅;  陈启生
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热毛细对流  磁场  双扩散  水平温度梯度  
Instabilities of surface tension driven flows between counter-rotating disks 会议论文
Asian Microgravity Pre-Symposium 9th China-Japan-Korea Workshop on Microgravity Sciences, 中国广西桂林/Guilin, China, 2012-10-29
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮)
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Counter  Driven  Rotating  Tension  Between  Surface  Rotation  Chebyshev  Reynolds  Method  Number  Stability  Pseudo  Prandtl  Horizontal  State  Hydrothermal  Unstable  Bifurcation  Stationary  
SiC晶体生长中流场的优化设计 期刊论文
工程热物理学报, 2011, 卷号: 32, 期号: 2, 页码: 308-311
Authors:  颜君毅;  陈启生;  姜燕妮;  李炜
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碳化硅晶体  Pvt法  场协同  浓度场  流场  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 会议论文
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
Authors:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  
Numerical simulation of ammonothermal growth processes of GaN crystals 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
Authors:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
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Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan