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第七届中国机构知识库学术研讨会报告:力学研究所机构知识库建设与应用实践 演示报告
来自: 第七届中国机构知识库学术研讨会, 武汉 ,2019
Authors:  张自兵;  徐以鸿
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机构知识库  特色数据  仪器设备  产出分析  论文绩效  
Effects of microfractures properties on stress-dependent permeability in tight oil reservoirs 会议论文
52nd U.S. Rock Mechanics/Geomechanics Symposium, Seattle, WA, United states, June 17, 2018 - June 20, 2018
Authors:  Yang L(杨柳);  Lu XB(鲁晓兵);  Shi X;  Zhang KH;  Gao J;  Chen X;  Zhang ZB
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Petroleum reservoirs  Road construction  Rock mechanics  Effective stress  Elasticity theory  Laboratory experiments  Microfractures  Oil reservoirs  Stress sensitive coefficient  Stress  dependent  Tight sandstones  
Pore network extraction from pore space images of various porous media systems 期刊论文
WATER RESOURCES RESEARCH, 2017, 卷号: 53, 期号: 4, 页码: 3424-3445
Authors:  Yi ZX;  Lin M(林缅);  Jiang WB(江文滨);  Zhang ZB;  Li HS;  Gao J;  Lin, M (reprint author), Chinese Acad Sci, Inst Mech, Beijing, Peoples R China.;  Lin, M (reprint author), Univ Chinese Acad Sci, Sch Engn Sci, Beijing, Peoples R China.
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Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
Authors:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
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Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 519-522
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Computer Simulation  Growth Model  Mass Transfer  Growth From Vapor  Seed Crystals  Semiconducting Silicon Compounds  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
Authors:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Numerical Simulation of the Flow Field and Concentration Distribution in the Bulk Growth of Silicon Carbide Crystals 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
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Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Authors:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
Adobe PDF(228Kb)  |  Favorite  |  View/Download:770/178  |  Submit date:2007/12/18
碳化硅晶体生长过程中的温度场与应力场的数值模拟 学位论文
硕士论文,北京: 中国科学院研究生院, 2005
Authors:  张自兵
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3D Finite Volume Scheme for Czochralski Crystal Growth 会议论文
Sixth World Congress on Computational Mechanics in Conjunction with the Second Asian-Pacific Congress on Computational Mechanics, Sept. 5-10, 2004, Beijing, China
Authors:  Lu J;  Zhang ZB(张自兵);  Chen QS(陈启生)
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