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Numerical simulation of ammonothermal growth processes of GaN crystals [会议论文]
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
姜燕妮; 陈启生; Prasad V
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Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems [会议论文]
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
陈启生; 姜燕妮; 颜君毅; 李炜; Prasad V
Adobe PDF(330Kb)  |  
 
Numerical simulation of ammonothermal growth processes of GaN crystals [期刊论文]
Journal of Crystal Growth, 2011-01-01, 卷: 318, 期: 1, 页: 411-414
Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V
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Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems [期刊论文]
Research on Chemical Intermediates, 2011-01-01, 卷: 37, 期: 2-5, 页: 467-477
Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V
Adobe PDF(330Kb)  |  
 
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals [期刊论文]
JOURNAL OF CRYSTAL GROWTH, 2007-01-01, 卷: 303, 期: 1, 页: 357-361
Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V
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Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals [期刊论文]
Journal of Rare Earths, 2007-01-01, 卷: 25, 页: 345-348
Chen QS(陈启生);  Deng GY(邓谷雨);  Ebadian A;  Prasad V
Adobe PDF(374Kb)  |  
 
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport [期刊论文]
Journal of Crystal Growth, 2006-01-01, 卷: 296, 期: 0, 页: 150-158
Pendurti S;  Chen QS(陈启生);  Prasad V
Adobe PDF(337Kb)  |  
 
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method [期刊论文]
Acta Mechanica Sinica, 2006-01-01, 卷: 22, 期: 1, 页: 40-45
Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V
Adobe PDF(446Kb)  |  
 
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization [期刊论文]
Journal of Crystal Growth, 2006-01-01, 卷: 292, 期: 2, 页: 197-200
Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
View  |  Adobe PDF(228Kb)  |  
 
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization [会议论文]
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
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