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Numerical simulation of ammonothermal growth processes of GaN crystals 期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 411-414
作者:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  收藏  |  浏览/下载:535/114  |  提交时间:2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  Single-crystals  Gallium Nitride  Heat-transfer  Fluid-flow  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 期刊论文
Research on Chemical Intermediates, 2011, 卷号: 37, 期号: 2-5, 页码: 467-477
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  收藏  |  浏览/下载:662/174  |  提交时间:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  Gallium Nitride  
Modeling of ammonothermal growth processes of GaN crystal in large-size pressure systems 会议论文
2nd International Solvothermal and Hydrothermal-Association Conference (ISHA 2010), Beijing, PEOPLES R CHINA, JUL 27-29, 2010
作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Li W(李炜);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(330Kb)  |  收藏  |  浏览/下载:630/156  |  提交时间:2012/04/01
Gan  Ammonothermal Growth  Baffle Opening  Fluid Flow  Thermal Fields  
Numerical simulation of ammonothermal growth processes of GaN crystals 会议论文
16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14), Beijing, PEOPLES R CHINA, AUG 08-13, 2010
作者:  Jiang YN(姜燕妮);  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100190, Peoples R China
Adobe PDF(511Kb)  |  收藏  |  浏览/下载:723/178  |  提交时间:2012/04/01
Convection  Fluid Flow  Growth Models  Ammonothermal Growth  Gan  
Application of Flow-Kinetics Model To the Pvt Growth of Sic Crystals 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 303, 期号: 1, 页码: 357-361
作者:  Chen QS(陈启生);  Yan JY(颜君毅);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(596Kb)  |  收藏  |  浏览/下载:28/10  |  提交时间:2016/01/11
Fluid Flows  Growth Models  Growth From Vapor  Single-crystal Growth  Semiconducting Silicon Compounds  
Numerical Study on Flow Field and Temperature Distribution in Growth Process of 200 mm Czochralski Silicon Crystals 期刊论文
Journal of Rare Earths, 2007, 卷号: 25, 页码: 345-348
作者:  Chen QS(陈启生);  Deng GY(邓谷雨);  Ebadian A;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(374Kb)  |  收藏  |  浏览/下载:558/135  |  提交时间:2009/08/03
Czochralski Growth  Flow Field  Temperature Distributions  Cusp Magnetic Field  
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 期刊论文
Journal of Crystal Growth, 2006, 卷号: 292, 期号: 2, 页码: 197-200
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
浏览  |  Adobe PDF(228Kb)  |  收藏  |  浏览/下载:493/177  |  提交时间:2007/06/15
Growth Models  X-ray Diffraction  Growth From Vapor  Single Crystal Growth  Silicon Carbide  
Thermoelastic Stresses in SiC Single Crystals Grown by the Physical Vapor Transport Method 期刊论文
Acta Mechanica Sinica, 2006, 卷号: 22, 期号: 1, 页码: 40-45
作者:  Zhang ZB(张自兵);  Lu J;  Chen QS(陈启生);  Prasad V;  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
Adobe PDF(446Kb)  |  收藏  |  浏览/下载:559/150  |  提交时间:2007/06/15
Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
作者:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
Adobe PDF(337Kb)  |  收藏  |  浏览/下载:530/175  |  提交时间:2007/06/15
Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization 会议论文
3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3), OCT 16-19, 2005, Beijing, PEOPLES R CHINA
作者:  Chen QS(陈启生);  Lu J;  Zhang ZB(张自兵);  Wei GD;  Prasad V
Adobe PDF(228Kb)  |  收藏  |  浏览/下载:678/153  |  提交时间:2007/12/18