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Molecular dynamics simulation of helium ion implantation into silicon and its migration 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 456, 页码: 53-59
Authors:  Liu L;  Xu ZW;  Li RR;  Zhu R;  Xu J;  Zhao JL;  Wang C(王超);  Nordlund K;  Fu X;  Fang FZ
Favorite  |  View/Download:11/0  |  Submit date:2019/10/14
Molecular dynamics simulation  Ion implantation  Helium  Si  Annealing  
Fast Growth of Strain-Free AIN on Graphene-Buffered Sapphire 期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2018, 卷号: 140, 期号: 38, 页码: 11935-11941
Authors:  Qi Y;  Wang YY;  Pang ZQ(庞振乾);  Dou ZP;  Wei TB;  Gao P;  Zhang SS;  Xu XZ;  Chang ZH;  Deng B;  Chen SL;  Chen ZL;  Ci HN;  Wang RY;  Zhao FZ;  Yan JC;  Yi XY;  Liu KH;  Peng HL;  Liu ZQ;  Tong LM;  Zhang J;  Wei YJ(魏宇杰);  Li JM;  Liu ZF
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