Transport Phenomena in Ammonothermal Growth of Gallium Nitride

IMECH-IR > 力学所知识产出(1956-2008)

	Transport Phenomena in Ammonothermal Growth of Gallium Nitride
	Chen QS(陈启生)
会议录名称	14th International Conference on Crystal Growth (ICCG-14, ICVGE-12),2004-08-09,
	2004-08-09
会议名称	14th International Conference on Crystal Growth (ICCG-14, ICVGE-12)
摘要	GaN can be used to fabricate blue/green/UV LEDs and high temperature, high power electronic devices. Ideal substrates are needed for high quality III-nitride epitaxy, which is an essential step for the manufacture of LEDs. GaN substrates are ideal to be lattice matched and isomorphic to nitride-based films. Bulk single crystals of GaN can be grown from supercritical fluids using the ammonothermal method, which utilizes ammonia as fluid rather than water as in the hydrothermal process. In this process, a mineralizer such as amide, imide or azide is used to attack a bulk nitride feedstock at temperatures from 200 - 500癈 and pressures from 1 - 4 kbar. Baffle design is essential for successful growth of GaN crystals. Baffle is used to separate the dissolving zone from the growth zone, and to maintain a temperature difference between the two zones. For solubility curve with a positive coefficient with respect to temperature, the growth zone is maintained at a lower temperature than that in the dissolving zone, thus the nutrient becomes supersaturated in the growth zone. The baffle opening is used to control the mixing of nutrients in the two zones, thus the transfer of nutrient from the lower part to the upper part. Ammonothermal systems have been modeled here using fluid dynamics, thermodynamics and heat transfer models. The nutrient is considered as a porous media bed and the flow is simulated using the Darcy-Brinkman-Forchheimer model. The resulting governing equations are solved using the finite volume method. We investigated the effects of baffle opening and position on the transport phenomena of nutrient from dissolving zone to the growth zone. Simulation data have been compared qualitatively with experimental data.
文献类型	会议论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/13944
专题	力学所知识产出(1956-2008)
通讯作者	Chen QS(陈启生)
推荐引用方式 GB/T 7714	Chen QS. Transport Phenomena in Ammonothermal Growth of Gallium Nitride[C]14th International Conference on Crystal Growth (ICCG-14, ICVGE-12),2004-08-09,,2004.