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Title:
Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering
Author: Wang P; Chen NF(陈诺夫); Yin ZG; Yang F; Peng CT
Source: Journal of Crystal Growth
Issued Date: 2006
Volume: 290, Issue:1, Pages:56-60
Abstract: Sb-doped and undoped ZnO thin films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 Omega cm). Annealing in a nitrogen ambient at 400 degrees C for 1 h made both samples highly resistive (rho > 10(3) Omega cm). Increasing the annealing temperature up to 800 C, the resistivity of the ttndoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 C became semi-insulating with a resistivity of 10(4)Omega cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed.
Language: 英语
Indexed Type: SCI
Corresponding Author: Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Correspondent Email: pwang@mail.semi.ac.cn
DOI: 10.1016/j.jcrysgro.2006.01.022
DOC Type: Article
WOS Subject: Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
WOS Subject Extended: Crystallography ; Materials Science ; Physics
WOS Keyword Plus: P-TYPE ZNO ; SPRAY-PYROLYSIS ; ZINC-OXIDE
WOS ID: WOS:000236656600010
ISSN: 0022-0248
Subject: 力学
Citation statistics:
Content Type: 期刊论文
URI: http://dspace.imech.ac.cn/handle/311007/15335
Appears in Collections:力学所知识产出(1956-2008)_期刊论文

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Recommended Citation:
Wang P,Chen NF,Yin ZG,et al. Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering[J]. Journal of Crystal Growth,2006-01-01,290(1):56-60.
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