Dislocation dynamics of strain relaxation in epitaxial layers

doi:10.1063/1.1369396

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	Dislocation dynamics of strain relaxation in epitaxial layers
	Wang ZQ(王自强); Zhang YW(张永伟); Chua SJ; Wang, TC (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100080, Peoples R China.
发表期刊	Journal of Applied Physics
	2001
卷号	89 期号:11 页码:6069-6072
ISSN	0021-8979
摘要	Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations
学科领域	力学
DOI	10.1063/1.1369396
收录类别	SCI
语种	英语
WOS记录号	WOS:000169149900030
关键词[WOS]	HETEROSTRUCTURES ; THICKNESS ; KINETICS ; SI
WOS研究方向	Physics
WOS类目	Physics, Applied
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/15957
专题	力学所知识产出(1956-2008)
通讯作者	Wang, TC (reprint author), Chinese Acad Sci, Inst Mech, LNM, Beijing 100080, Peoples R China.
推荐引用方式 GB/T 7714	Wang ZQ,Zhang YW,Chua SJ,et al. Dislocation dynamics of strain relaxation in epitaxial layers[J]. Journal of Applied Physics,2001,89,11,:6069-6072.
APA	王自强,张永伟,Chua SJ,&Wang, TC .(2001).Dislocation dynamics of strain relaxation in epitaxial layers.Journal of Applied Physics,89(11),6069-6072.
MLA	王自强,et al."Dislocation dynamics of strain relaxation in epitaxial layers".Journal of Applied Physics 89.11(2001):6069-6072.

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