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Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition | |
Li YC(李延春)![]() | |
Source Publication | SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY
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2003 | |
Volume | 46Issue:1Pages:47-51 |
ISSN | 1672-1799 |
Abstract | Bulk single crystals b-FeSi2, as a new photoelectric and thermoelectric material, has been successfully grown using chemical vapor transport technique by using iodine as transport agent in a sealed ampoule. The effects of crystal growth condition on quality and morphologies of the single crystals were studied. Both needle-like and grain-like single crystals were gained. By changing substrate temperature, tetrahedral high quality a-FeSi2 single crystals were also obtained. |
Subject Area | 力学 |
DOI | 10.1360/03yg9007 |
Indexed By | SCI |
Language | 英语 |
WOS ID | WOS:000181438600007 |
WOS Research Area | Physics |
WOS Subject | Physics, Multidisciplinary |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://dspace.imech.ac.cn/handle/311007/16378 |
Collection | 力学所知识产出(1956-2008) |
Corresponding Author | Li, YC (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
Recommended Citation GB/T 7714 | Li YC,Sun LL,Cao LM,et al. Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition[J]. SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003,46,1,:47-51. |
APA | 李延春.,孙力玲.,曹立民.,Zhao JH.,Wang HY.,...&Li, YC .(2003).Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition.SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,46(1),47-51. |
MLA | 李延春,et al."Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition".SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY 46.1(2003):47-51. |
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