Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS<sub>2</sub>: Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding

doi:10.1002/smll.202303511

IMECH-IR > 非线性力学国家重点实验室

	Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS₂: Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding
	Li, Shouheng 1,2; Lin JG(林金国)3,4 ; Chen, Yun 1; Luo, Zheng 1; Cheng, Haifeng 1; Liu F(刘峰)3,4 ; Zhang, Jin 2,5; Wang, Shanshan 1,5
通讯作者	Liu, Feng(liufeng@imech.ac.cn) ; Wang, Shanshan(wangshanshan08@nudt.edu.cn)
发表期刊	SMALL
	2023-09-25
页码	11
ISSN	1613-6810
摘要	Understanding the growth behavior and morphology evolution of defects in 2D transition metal dichalcogenides is significant for the performance tuning of nanoelectronic devices. Here, the low-voltage aberration-corrected transmission electron microscopy with an in situ heating holder and a fast frame rate camera to investigate the sulfur vacancy lines in monolayer MoS2 is applied. Vacancy concentration-dependent growth anisotropy is discovered, displaying first lengthening and then broadening of line defects as the vacancy densifies. With the temperature increase from 20 degrees C to 800 degrees C, the defect morphology evolves from a dense triangular network to an ultralong linear structure due to the temperature-sensitive vacancy migration process. Atomistic dynamics of line defect reconstruction on the millisecond time scale are also captured. Density functional theory calculations, Monte Carlo simulation, and configurational force analysis are implemented to understand the growth and reconstruction mechanisms at relevant time and length scales. Throughout the work, high-resolution imaging is closely combined with quantitative analysis of images involving thousands of atoms so that the atomic-level structure and the large-area statistical rules are obtained simultaneously. The work provides new ideas for balancing the accuracy and universality of discoveries in the TEM study and will be helpful to the controlled sculpture of nanomaterials.
关键词	2D materials AC-transmission electron microscopy (TEM) growth anisotropy line defects morphology MoS2
DOI	10.1002/smll.202303511
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:001071478400001
关键词[WOS]	CHEMICAL-VAPOR-DEPOSITION ; EPITAXIAL-GROWTH ; SINGLE-CRYSTALS ; VISUALIZATION ; EFFICIENCY
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS类目	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
资助项目	S.W. acknowledges support from the National Natural Science Foundation of China (52172032, 52222201), Young Elite Scientist Sponsorship Program by CAST (YESS20200222), State Administration of Science, Technology, and Industry for National Defense (WDZC2019[11972349] ; S.W. acknowledges support from the National Natural Science Foundation of China (52172032, 52222201), Young Elite Scientist Sponsorship Program by CAST (YESS20200222), State Administration of Science, Technology, and Industry for National Defense (WDZC2019[11790292] ; National Natural Science Foundation of China[YESS20200222] ; Young Elite Scientist Sponsorship Program by CAST[WDZC20195500503] ; State Administration of Science, Technology, and Industry for National Defense[ZZCX-ZZGC-01-07] ; National University of Defense Technology[2022JJ20044] ; Hunan Natural Science Foundation[2016YFA0200100] ; Hunan Natural Science Foundation[2018YFA0703502] ; Ministry of Science and Technology of China[XDB36030100] ; Strategic Priority Research Program of CAS[BNLMS-CXTD-202001] ; Beijing National Laboratory for Molecular Sciences[XDB22040503] ; Strategic Priority Research Program of the Chinese Academy of Sciences
项目资助者	S.W. acknowledges support from the National Natural Science Foundation of China (52172032, 52222201), Young Elite Scientist Sponsorship Program by CAST (YESS20200222), State Administration of Science, Technology, and Industry for National Defense (WDZC2019 ; National Natural Science Foundation of China ; Young Elite Scientist Sponsorship Program by CAST ; State Administration of Science, Technology, and Industry for National Defense ; National University of Defense Technology ; Hunan Natural Science Foundation ; Ministry of Science and Technology of China ; Strategic Priority Research Program of CAS ; Beijing National Laboratory for Molecular Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
论文分区	一类
力学所作者排名	1
RpAuthor	Liu, Feng ; Wang, Shanshan
引用统计
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/93024
专题	非线性力学国家重点实验室
作者单位	1.Natl Univ Def Technol, Coll Aerosp Sci & Engn, Sci & Technol Adv Ceram Fibers & Composites Lab, Changsha 410073, Peoples R China; 2.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing Sci & Engn Ctr Nanocarbons,Beijing Natl La, Beijing 100871, Peoples R China; 3.Chinese Acad Sci, Inst Mech, State Key Lab Nonlinear Mech, Beijing 100190, Peoples R China; 4.Univ Chinese Acad Sci, Sch Engn Sci, Beijing 100049, Peoples R China; 5.Peking Univ, Sch Adv Mat, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Li, Shouheng,Lin JG,Chen, Yun,et al. Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS₂: Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding[J]. SMALL,2023:11.
APA	Li, Shouheng.,林金国.,Chen, Yun.,Luo, Zheng.,Cheng, Haifeng.,...&Wang, Shanshan.(2023).Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS₂: Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding.SMALL,11.
MLA	Li, Shouheng,et al."Growth Anisotropy and Morphology Evolution of Line Defects in Monolayer MoS₂: Atomic-Level Observation, Large-Scale Statistics, and Mechanism Understanding".SMALL (2023):11.

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