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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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微重力重点实验室 [1]
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何蒙 [1]
朱鹏 [1]
陈启生 [1]
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Indexed By：EI
Indexed By：SCI
Source Publication：JOURNAL OF CRYSTAL GROWTH
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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
Authors:
Chen QS(陈启生)
;
Zhu P(朱鹏)
;
He M(何蒙)
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Submit date：2020/03/11
Computer simulation
Defects
Heat transfer
Stresses
Growth from vapor
Semiconducting silicon compounds
