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Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport 期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:  Pendurti S;  Chen QS(陈启生);  Prasad V;  Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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Modeling of Ammonothermal Growth of Nitrides 期刊论文
Journal of Crystal Growth, 2003, 卷号: 258, 页码: 181-187
Authors:  Chen QS(陈启生);  Prasad V.;  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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Concentration distribution in solution crystal growth: effect of moving interface conditions 期刊论文
Journal of Crystal Growth, 1999, 卷号: 203, 期号: 1-2, 页码: 227-233
Authors:  Wang W(王伟);  Hu WR(胡文瑞);  Wang, W (reprint author), Chinese Acad Sci, Inst Mech, Beijing 100080, Peoples R China.
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