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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [6]
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reprint au... [6]
陈诺夫 [6]
Yin ZG [5]
Yang F [3]
Chai CL [2]
Liu LF [2]
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2007 [1]
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Indexed By:SCI
Source Publication:Journal of Crystal Growth
Creator:reprint author
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Creator:陈诺夫
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On the formation of well-aligned ZnO nanowall networks by catalyst-free thermal evaporation method
期刊论文
Journal of Crystal Growth, 2007, 卷号: 305, 期号: 1, 页码: 296-301
Authors:
Yin ZG
;
Chen NF(陈诺夫)
;
Dai RX(戴瑞烜)
;
Liu L
;
Zhang XW
;
Wang XH
;
Wu JL
;
Chai CL
;
Yin, ZG (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(719Kb)
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View/Download:1016/221
  |  
Submit date:2009/08/03
Nanostructures
Physical Vapor Deposition Processes
Zno
Semiconducting Materials
Thin-films
Optical-properties
Vapor-deposition
Growth-mechanism
Nanowires
Nanosheets
Sapphire
Emission
Fabrication and Properties of Sb-Doped ZnO thin Films Grown by Radio Frequency (RF) Magnetron Sputtering
期刊论文
Journal of Crystal Growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
Authors:
Wang P
;
Chen NF(陈诺夫)
;
Yin ZG
;
Yang F
;
Peng CT
;
Wang, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(287Kb)
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View/Download:1616/465
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Submit date:2007/06/15
Magnetron Sputtering Growth of InAs0.3Sb0.7 Films on (100) GaAs Substrates: Strong Effect of Growth Conditions on Film Structure
期刊论文
Journal of Crystal Growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
Authors:
Peng CT
;
Chen NF(陈诺夫)
;
Wu JL
;
Yin ZG
;
Yu YD
;
Peng, CT (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(268Kb)
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View/Download:986/245
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Submit date:2007/06/15
The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N
期刊论文
Journal of Crystal Growth, 2004, 卷号: 262, 期号: 1-4, 页码: 287-289
Authors:
Zhang FQ(张富强)
;
Chen NF(陈诺夫)
;
Liu XL
;
Liu ZK
;
Yang SY
;
Chai CL
;
Zhang, FQ (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(168Kb)
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View/Download:718/174
  |  
Submit date:2009/08/03
X-ray Diffraction
Ion Beam depositIon
Gan/al2o3
Ferromagnetic Materials
Implanted Gan
Injection
Magnetic Properties of Mn-Implanted n-Type Ge
期刊论文
Journal of Crystal Growth, 2004, 卷号: 273, 期号: 1-2, 页码: 106-110
Authors:
Liu LF
;
Chen NF(陈诺夫)
;
Chen CL
;
Li YL
;
Yin ZG
;
Yang F
;
Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(200Kb)
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View/Download:887/198
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Submit date:2007/06/15
Investigation of Mn-Implanted n-Type Ge
期刊论文
Journal of Crystal Growth, 2004, 卷号: 265, 期号: 3-4, 页码: 466-470
Authors:
Liu LF
;
Chen NF(陈诺夫)
;
Yin ZG
;
Yang F
;
Zhou JP
;
Zhang FQ
;
Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(276Kb)
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View/Download:724/167
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Submit date:2007/06/15