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中国科学院力学研究所机构知识库
Knowledge Management System of Institue of Mechanics, CAS
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力学所知识产出(19... [1]
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Pendurti S [1]
Prasad V [1]
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陈启生 [1]
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2006 [1]
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Source Publication：Journal of Crystal Growth
Date Issued：2006
Document Type：期刊论文
Community：力学所知识产出(1956-2008)
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Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport
期刊论文
Journal of Crystal Growth, 2006, 卷号: 296, 期号: 0, 页码: 150-158
Authors:
Pendurti S
;
Chen QS(陈启生)
;
Prasad V
;
Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
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Submit date：2007/06/15
