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Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) 期刊论文
Journal of Crystal Growth, 2004, 卷号: 270, 期号: 1-2, 页码: 21-29
Authors:  Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF(陈诺夫);  Zhou, JP (reprint author), Tsing Hua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
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Auger Electron Spectroscopy  Atomic Force Microscopy  Crystal Structures  X-ray Photoelectron Spectroscopy  Ion-beam Deposition  Oxides  4d Photoemission  High-resolution  Thin-films  Silicon  System  Gd2o3  Y2o3  
Mn implanted GaAs by low energy ion beam deposition 期刊论文
Journal of Crystal Growth, 2004, 卷号: 264, 期号: 1-3, 页码: 31-35
Authors:  Song SL;  Chen NF(陈诺夫);  Zhou JP;  Yin ZG;  Li YL;  Yang SY;  Liu ZK;  Song, SL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China.
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X-ray Diffraction  Ion Beam Deposit  Magnetic Materials  Semiconducting Gallium Arsenide  Curie-temperature  Semiconductors  Ferromagnetism  System  Mn)As  (Ga  Gan  
Magnetic Properties of Mn-Implanted n-Type Ge 期刊论文
Journal of Crystal Growth, 2004, 卷号: 273, 期号: 1-2, 页码: 106-110
Authors:  Liu LF;  Chen NF(陈诺夫);  Chen CL;  Li YL;  Yin ZG;  Yang F;  Liu, LF (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Modeling of Ammonothermal Growth of Nitrides 期刊论文
Journal of Crystal Growth, 2003, 卷号: 258, 页码: 181-187
Authors:  Chen QS(陈启生);  Prasad V.;  Hu WR(胡文瑞);  Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
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(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition 期刊论文
Journal of Crystal Growth, 2002, 卷号: 234, 期号: 2-3, 页码: 359-363
Authors:  Yang JL;  Chen NF(陈诺夫);  Liu ZK;  Yang SY;  Chai CL;  Liao MY;  He HJ
Adobe PDF(125Kb)  |  Favorite  |  View/Download：2060/451  |  Submit date：2009/02/17
X-ray Diffraction