(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition

doi:10.1016/S0022-0248(01)01722-5

IMECH-IR > 力学所知识产出(1956-2008)

	(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition
	Yang JL; Chen NF(陈诺夫); Liu ZK; Yang SY; Chai CL; Liao MY; He HJ
发表期刊	Journal of Crystal Growth
	2002
卷号	234 期号:2-3 页码:359-363
ISSN	0022-0248
摘要	The (Ga,Mn,As) compounds were obtained by the implantation of Mn ions into semi-insulating GaAs substrate with mass-analyzed low energy dual ion beam deposition technique. Auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250°C showed that the Mn ions were successfully implanted into GaAs substrate with the implantation depth of 160 nm. X-ray diffraction was employed for the structural analyses of all samples. The experimental results were greatly affected by the substrate temperature. Ga5.2Mn was obtained in the sample grown at the substrate temperature of 250°C. Ga5.2Mn, Ga5Mn8 and Mn3Ga were obtained in the sample grown at the substrate temperature of 400°C. However, there is no new phase in the sample grown at the substrate temperature of 200°C. The sample grown at 400°C was annealed at 840°C. In this annealed sample Mn3Ga disappeared, Ga5Mn8 tended to disappear, Ga5.2Mn crystallized better and a new phase of Mn2As was generated.
关键词	X-ray Diffraction
学科领域	微重力流体力学
DOI	10.1016/S0022-0248(01)01722-5
收录类别	SCI
语种	英语
WOS记录号	WOS:000173057500013
WOS研究方向	Crystallography ; Materials Science ; Physics
WOS类目	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://dspace.imech.ac.cn/handle/311007/13635
专题	力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Yang JL,Chen NF,Liu ZK,et al. (Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition[J]. Journal of Crystal Growth,2002,234,2-3,:359-363.
APA	Yang JL.,陈诺夫.,Liu ZK.,Yang SY.,Chai CL.,...&He HJ.(2002).(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition.Journal of Crystal Growth,234(2-3),359-363.
MLA	Yang JL,et al."(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam deposition".Journal of Crystal Growth 234.2-3(2002):359-363.

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