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Simulations of dislocation density in silicon carbide crystals grown by the PVT-method 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2020, 卷号: 531, 页码: 6
Authors:  Chen QS(陈启生);  Zhu P(朱鹏);  He M(何蒙)
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Computer simulation  Defects  Heat transfer  Stresses  Growth from vapor  Semiconducting silicon compounds  
Transient growth in thermocapillary liquid layers 期刊论文
PHYSICAL REVIEW FLUIDS, 2020, 卷号: 5, 期号: 1, 页码: 18
Authors:  Hu KX(胡开鑫);  Zheng S;  Chen QS(陈启生)
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